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LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers

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Abstract

Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thick PbSe layer is then grown by LPE. The LPE-grown PbSe displays excellent surface morphology and is continuous over the entire 8×8 mm2 area of growth. This result is surprising because of the large mismatch in thermal expansion coefficients between PbSe and Si. Previous attempts to grow crack-free PbSe by MBE alone using similar buffer structures on (100)-oriented Si have been unsuccessful. It is speculated that the large concentration of Se vacancies in the LPE-grown PbSe layer may allow dislocation climb along higher order slip planes, providing strain relaxation.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, 73019, Norman, OK

    B. N. Strecker, P. J. McCann & X. M. Fang

  2. Department of Physics, Oklahoma State University, 74078, Stillwater, OK

    R. J. Hauenstein & M. O’steen

  3. Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, 73019, Norman, OK

    M. B. Johnson

Authors
  1. B. N. Strecker
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  2. P. J. McCann
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  3. X. M. Fang
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  4. R. J. Hauenstein
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  5. M. O’steen
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Strecker, B.N., McCann, P.J., Fang, X.M. et al. LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers. J. Electron. Mater. 26, 444–448 (1997). https://doi.org/10.1007/s11664-997-0117-5

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  • DOI: https://doi.org/10.1007/s11664-997-0117-5

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