1. Foreword

   EditorialNotes Pages: 839 - 839

2. Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

   • Douglas H. Lowndes
   • David P. Norton

   OriginalPaper Pages: 841 - 847

3. Composition of pulsed-laser-deposited Y-Ba-Cu-0 and Ba-K-Bi-O thin films

   • M. C. Foote
   • R. P. Vasquez
   • J. B. Barner

   OriginalPaper Pages: 849 - 853

4. Pulsed laser deposition of carbon films: Dependence of film properties on laser wavelength

   • P. T. Murray
   • D. T. Peeler

   OriginalPaper Pages: 855 - 859

5. Domain epitaxial growth of TiN/Si(001), TiN/GaAs(001), and Si/TiN/Si(001) heterostructures by laser physical vapor deposition: Theory and experiment

   • K. Jagannadham
   • J. Narayan
   • P. Tiwari

   OriginalPaper Pages: 861 - 874

6. Pulsed laser deposition of epitaxial Ba_xSr_1−xTiO₃/YBa₂Cu₃O₇ bilayers on LaAIO₃ substrates

   • S. D. Harkness
   • C. F. Yue
   • R. K. Singh

   OriginalPaper Pages: 875 - 878

7. Synthesis and characterization of Pb(Zr_0.54Ti_0.46)O₃ thin films on (100)Si using textured YBa₂Cu₃O_7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique

   • P. Tiwari
   • T. Zheleva
   • J. Narayan

   OriginalPaper Pages: 879 - 882

8. Low temperature passivation of Si_1−xGe_x alloys by dry high pressure oxidation

   • C. Caragianis
   • Y. Shigesato
   • D. C. Paine

   OriginalPaper Pages: 883 - 888

9. Crystallographic evolution of microstructure in thin film processing: Part I. grain size distribution

   • J. A. Trogolo
   • R. Roy
   • Krishna Rajan

   OriginalPaper Pages: 889 - 892

10. Crystallographic evolution of microstructure in thin film processing: Part II. Grain boundary structure

    • Ronald R. Petkie
    • K. N. Tu
    • Krishna Rajan

    OriginalPaper Pages: 893 - 899

11. Nanocrystalline Ge synthesis by the chemical reduction of hydrothermally grown Si_0.6Ge_0.4O₂

    • David C. Paine
    • Tae Young Kim
    • Yuzo Shigesato

    OriginalPaper Pages: 901 - 906

12. Processing effects on the morphological stability at epitaxial interfaces

    • Ravi M. Bhatkal
    • Krishna Rajan

    OriginalPaper Pages: 907 - 911

13. Critical issues in thin film microstructure development

    • R. K. Singh
    • K. Rajan

    OriginalPaper Pages: 913 - 918

14. Intermetallic embrittlement of thin unsupported tin/copper specimens

    • G. B. Freeman
    • B. R. Livesay
    • E. G. O’Neil

    OriginalPaper Pages: 919 - 924

15. Optocoupler made from semiconducting polymers

    • G. Yu
    • K. Pakbaz
    • A. J. Heeger

    OriginalPaper Pages: 925 - 928

16. Dislocation-Induced deep level states in In_0.08Ga_0.92As/GaAs heterostructures

    • A. Raisanen
    • L. J. Brillson
    • H. Wieder

    OriginalPaper Pages: 929 - 933

17. Dopant activation energy and hole effective mass in heavily Zn-Doped InP

    • K. Hansen
    • E. Peiner
    • M. Von Ortenberg

    OriginalPaper Pages: 935 - 941

18. Capacitance-Voltage characteristics of metal-insulator-semiconductor diodes with S passivation and Si interface control layers on GaAs and InP

    • D. Landheer
    • Z. -H. Lu
    • W. M. Lau

    OriginalPaper Pages: 943 - 952

19. Ohmic contact formation in palladium-based metallizations to n-Type InP

    • Ping Jian
    • Douglas G. Ivey
    • Gordon Knight

    OriginalPaper Pages: 953 - 962

20. Observation of phase separation in Hg_1−xCd_xTe solid solutions by low incident angle x-ray diffraction

    • Heribert Wiedemeier
    • Kuo-Tong Chen

    OriginalPaper Pages: 963 - 968

21. Contrast modulations in InAIAs/InP

    • F. Peiró
    • A. Cornet
    • A. Christou

    OriginalPaper Pages: 969 - 974

22. Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures

    • JPR David
    • R. Grey
    • D. J. Mowbray

    OriginalPaper Pages: 975 - 982

23. Formation mechanism of In_xGa_1−xAs ohmic contacts to n-type GaAs prepared by radio frequency sputtering

    • Chihiro J. Uchibori
    • Masayuki Okunishi
    • Masanori Murakami

    OriginalPaper Pages: 983 - 989

24. Electrical and structural properties of GeMoW ohmic contact to an In_0.5Ga_0.5As cap layer on n-Type GaAs

    • K. G. Merkel
    • V. M. Bright
    • S. D. Walck

    OriginalPaper Pages: 991 - 996