Abstract
We have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (00l)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ, = 248 nm, τ = 20 nanosecs). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9 × 10−4 Torr) at 775°C on (001)Si substrate having <001>YSZ // <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mTorr) at 650°C. The temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4-0.6 Torr, respectively. The laser fluence to deposit this multilayer structure was 2.5-5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800-1000, a saturation polarization of 37.81 µC/cm2, remnant polarization of 24.38 µC/cm2 and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.
Similar content being viewed by others
References
Ferroelectric Thin Films, ed. E.R. Myers and A. Kingan (Pittsburgh, PA: Materials Research Society, 1990).
J. F. Scott, L. Kammerdimer, M. Parris, S. Trayner, V. Ottenbacher, A. Shawabken and W.F. Oliver,J. Appl. Phys. 64, 787 (1988).
M. Okuyama, Y. Matsui, H. Nakamo and Y. Hamakawa,Ferroelectrics 33, 235 (1981).
R. Takayama, Y. Tomita, K. Iijima and I. Veda,J. Appl. Phys. 61, 411 (1987).
T. Kawaguchi, H. Adachi, K. Setsune and K. Wasa,Appl. Opt. 23, 2187 (1984).
M. Ishida, H. Matsuhami and T. Tanaka,Appl. Phys. Lett. 31, 433 (1977).
H. Adachi, Y. Mitsuya, O. Yamazaki and K. Wasa,J. Appl. Phys. 30, 736 (1986).
A. Okada,J. Appl. Phys. 49, 4494 (1978).
S. B. Krupanidhi, N. Maffei, M. Sayer and K. El-Assal,J. Appl. Phys. 54, 6601 (1983).
M. Oikawa and K. Toda,Appl. Phys. Lett. 29, 491 (1976).
T. Nakagawa, J. Yamaguchi, M. Okuyama and Y. Hamakawa,Jpn. J. Appl. Phys. 21, L655 (1982).
B. S. Kwak, E. P. Boyd and A. Erbil,Appl. Phys. Lett. 53, 1702 (1988).
R. W. Vest and J. Xu,Ferroelectrics 93, 21 (1988).
S. Otsubo, T. Maeda, T. Minamikawa, Y. Yonezawa, A. Morimoto and T. Shimizu,Jpn. J. Appl. Phys. 29, L133 (1990).
Kazuhide Abe, Hiroshi Tomita, Hiroshi Toyoda, Motomasa Imai and Yukari Yokote,Jpn. J.Appl. Phys. 30, 2152 (1991).
H. Kidoh, T. Ogawa, A. Morimoto and T. Shimizu,Appl. Phys. Lett. 58, 2910 (1991).
R. Ramesh, A. Inam, W.K. Chan, F. Tillerot, B. Wilkens, C.C. Chang, T. Sands, J.M. Tarascon and V.G. Kermidas,Appl. Phys. Lett. 59, 3542 (1991).
P. Tiwari, S.M. Kanetkar, S. Sharan and J. Narayan,Appl. Phys. Lett. 57, 1578 (1990).
D. K. Fork, D. B. Fenner, R. W. Barton, J. M. Phillips, G. A. N. Connell, J. B. Boyce and T. H. Geballe,Appl. Phys. Lett. 57, 1161 (1990).
R. K. Singh, J. Narayan, A. K. Singh and C. B. Lee,J. Appl. Phys. 67, 3448 (1990).
R. K. Singh, L. Ganapathi, P. Tiwari and J. Narayan,Appl. Phys. Lett. 55, 2351 (1989).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Tiwari, P., Zheleva, T. & Narayan, J. Synthesis and characterization of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique. J. Electron. Mater. 23, 879–882 (1994). https://doi.org/10.1007/BF02655358
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02655358