1. Editorial announcement

   Announcement Pages: 1017 - 1017

2. Heat flow modeling of chemical vapor deposition of tungsten for improved film thickness uniformity

   • Julius C. Chang
   • Lisa A. Megna

   OriginalPaper Pages: 1019 - 1025

3. Local structure around iron at the SiO₂/Si interface

   • T. Kitano

   OriginalPaper Pages: 1027 - 1031

4. A digital signal-processing analysis technique for the infrared reflectivity characterization of ion implanted silicon

   • Gustavo E. Aizenberg
   • Pieter L. Swart
   • Beatrys M. Lacquet

   OriginalPaper Pages: 1033 - 1040

5. Ion-assisted molecular beam epitaxy of GaAs on Si(100)

   • C. -H. Choi
   • R. Ai
   • S. A. Barnett

   OriginalPaper Pages: 1041 - 1046

6. Growth of Al_xGa_1−x as by metalorganic chemical vapor deposition using trimethylgallium and trimethylamine alane

   • V. S. Sundaram
   • L. M. Fraas
   • C. C. Samuel

   OriginalPaper Pages: 1047 - 1050

7. Reduction of deep levels in MOCVD-regrown Al_xGa_1−x as interfaces by (NH₄)₂S passivation and in-situ HCl etching

   • G. Guel
   • E. A. Armour
   • S. D. Hersee

   OriginalPaper Pages: 1051 - 1056

8. Molecular heterostructure devices composed of langmuir-blodgett films of conducting polymers

   • E. Punkka
   • M. F. Rubner

   OriginalPaper Pages: 1057 - 1063

9. Effect of the second filler which melted during composite fabrication on the electrical properties of short fiber polymer-matrix composites

   • Lin Li
   • Pay Yih
   • D. D. L. Chung

   OriginalPaper Pages: 1065 - 1071

10. The effect of grain boundaries on the electrical properties of zinc oxide-based varistor

    • Shr-Nan Bai
    • Tseung-Yuen Tseng

    OriginalPaper Pages: 1073 - 1079