Abstract
GaAs was grown by molecular beam epitaxy (MBE) and ion-assisted MBE on Si(100) substrates. Three-dimensional (3D) island nucleation, observed during MBE growth, was eliminated during ion-assisted MBE when the ion energyE was >25 eV and the product ofE and the current densityJ was ≈6-12 eV mA/cm2. IncreasingEJ to ≈15 eV mA/ cm2 resulted in excessive ion damage. Decreasing the substrate temperature from 280 to 580° C during ion-assisted MBE yielded a slight decrease in surface roughness, and flatter surfaces were obtained for lower As4/Ga flux ratios. The suppression of 3D island nucleation led to an improvement in the crystalline perfection of thicker GaAs films. For example, the x-ray diffraction rocking-curve full-width-at-half-maximum values for 0.5 μm thick films grown at 380° C decreased from 1700 arcsec to 1350 arcsec when ion irradiation was used during nucleation. IAMBE allowed nucleation of thin, relatively flat-surfaced GaAs films even at 580° C, resulting in FWHM values of 1850 arcsec for 0.14 /μm thick films.
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Choi, C.H., Ai, R. & Barnett, S.A. Ion-assisted molecular beam epitaxy of GaAs on Si(100). J. Electron. Mater. 21, 1041–1046 (1992). https://doi.org/10.1007/BF02665881
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DOI: https://doi.org/10.1007/BF02665881