Heat flow modeling of chemical vapor deposition of tungsten for improved film thickness uniformity Julius C. ChangLisa A. Megna OriginalPaper Pages: 1019 - 1025
A digital signal-processing analysis technique for the infrared reflectivity characterization of ion implanted silicon Gustavo E. AizenbergPieter L. SwartBeatrys M. Lacquet OriginalPaper Pages: 1033 - 1040
Ion-assisted molecular beam epitaxy of GaAs on Si(100) C. -H. ChoiR. AiS. A. Barnett OriginalPaper Pages: 1041 - 1046
Growth of AlxGa1−x as by metalorganic chemical vapor deposition using trimethylgallium and trimethylamine alane V. S. SundaramL. M. FraasC. C. Samuel OriginalPaper Pages: 1047 - 1050
Reduction of deep levels in MOCVD-regrown AlxGa1−x as interfaces by (NH4)2S passivation and in-situ HCl etching G. GuelE. A. ArmourS. D. Hersee OriginalPaper Pages: 1051 - 1056
Molecular heterostructure devices composed of langmuir-blodgett films of conducting polymers E. PunkkaM. F. Rubner OriginalPaper Pages: 1057 - 1063
Effect of the second filler which melted during composite fabrication on the electrical properties of short fiber polymer-matrix composites Lin LiPay YihD. D. L. Chung OriginalPaper Pages: 1065 - 1071
The effect of grain boundaries on the electrical properties of zinc oxide-based varistor Shr-Nan BaiTseung-Yuen Tseng OriginalPaper Pages: 1073 - 1079