Insitu incorporation of Al and N andp-n junction diode fabrication in alpha(6H)-SiC thin films Y. C. WangR. F. DavisJ. A. Edmond OriginalPaper Pages: 289 - 294
Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes J. P. R. DavidR. GreyJ. Woodhead OriginalPaper Pages: 295 - 297
A comparative evaluation of spin-on-glass cure by FTIR technique F. GualandrisL. MasiniA. Borghesi OriginalPaper Pages: 299 - 304
Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process F. RenT. R. FullowanA. B. Emerson OriginalPaper Pages: 305 - 308
The use of langmuir probe measurements to investigate the reaction mechanisms of remote plasma-enhanced chemical vapor deposition B. AnthonyT. HsuA. Tasch OriginalPaper Pages: 309 - 313
Growth and optical characterization of strained CdZnTe/ CdTe quantum wells J. L. RenoE. D. Jones OriginalPaper Pages: 315 - 318
Growth and characterization of iron aluminide films on compound semiconductors R. R. KellerA. M. WowchakW. W. Gerberich OriginalPaper Pages: 319 - 324
Fabrication and properties of PLZT ceramics from spray-dried aqueous solution Bi-Shiou ChiouJ. N. Kuo OriginalPaper Pages: 325 - 330
Selective deposition of TiSi2 on oxide patterned wafers using low pressure chemical vapor deposition Jaegab LeeRafael Reif OriginalPaper Pages: 331 - 337
Errata: Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process J. O. CristD. C. Look Erratum Pages: 339 - 339
Large critical current densities in YBa2Cu3O7-x thin films formed by plasma-enhanced metalorganic chemical vapor deposition at reduced temperature J. ZhaoY. Q. LiF. Cosandey OriginalPaper Pages: 341 - 343
