Abstract
A range of InGaAs/GaAs strained layer multiple quantum well pin diode structures with different barrier dimensions has been grown and characterized. High quality low leakage structures (< 2 × 10−4 A/cm2 @ 0.9 V BD ) with a high degree of strain (∼2%) have been produced. An important factor affecting the leakage for a fixed well composition and dimension is found to be the barrier width.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Woodhead, F. Gonzalez Sanz, P. A. Claxton and J. P. R. David, Semicond. Sci. Tech.3, 601 (1988).
D. A. Dahl, L. J. Dries, F. A. Junga, W. G. Opyd and P. Chu, J. Appl. Phys.61, 2079 (1987).
G. E. Bulman, T. E. Zipperian and L. R. Dawson, Appl. Phys. Lett.49, 212 (1986).
U. Das, Y. Zebda, P. Bhattacharya and A. Chin, Appl. Phys. Lett.51, 1164 (1987).
J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth27, 118 (1984).
R. Grey, J. P. R. David, P. A. Claxton, F. Gonzalez Sanz and J. Woodhead, J. Appl. Phys.66, 975 (1989).
D. Gershoni, H. Temkin and M. B. Panish, Appl. Phys. Lett.53, 1924 (1988).
S. R. Forrest, R. G. Smith and O. K. Kim, IEEE J. Quantum Electron18, 2040 (1982).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
David, J.P.R., Grey, R., Pate, M.A. et al. Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes. J. Electron. Mater. 20, 295–297 (1991). https://doi.org/10.1007/BF02657893
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02657893