1. Dislocation filtering: why it works, when it doesn’t

   • Brian W. Dodson

   Specil Issue Papers Pages: 503 - 508

2. Materials characteristics of pseudomorphic high electron mobility transistor structures with In_xGa_1−xas single quantum well and GaAs-In_xGa_1−xas (0.25 < x < 0.4) thin strained superlattice active layers

   • J. M. Ballingall
   • Pin Ho
   • E. L. Hall

   Specil Issue Papers Pages: 509 - 513

3. A novel current injected strained quantum well laser grown by MOVPE

   • J. N. Tothill
   • J. H. Wilkie
   • M. H. Lyons

   Specil Issue Papers Pages: 515 - 519

4. Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinement

   • E. F. Schubert
   • J. M. Kuo
   • R. F. Kopf

   Specil Issue Papers Pages: 521 - 531

5. Correlation between photoluminescence data and device performance of p-channel strained-layer materials

   • E. D. Jones
   • T. E. Zipperian
   • L. R. Dawson

   Specil Issue Papers Pages: 533 - 537

6. Processing parameters for selective intermixing of GaAs/AIGaAs quantum wells

   • Xin Wen
   • Jim Y. Chi
   • Paul Melman

   Specil Issue Papers Pages: 539 - 542

7. Molecular beam epitaxy of CdSe and the derivative alloys Zn_1−x Cd _x Se and Cd_1−x M _x Se

   • N. Samarth
   • H. Luo
   • N. Otsuka

   Specil Issue Papers Pages: 543 - 547

8. The stability of α-Sn grown on CdTe by molecular beam epitaxy

   • J. L. Reno
   • L. L. Stephenson

   Specil Issue Papers Pages: 549 - 553

9. Structural, electrical and optical characterization of singlecrystal ErAs layers grown on GaAs by MBE

   • J. D. Ralston
   • H. Ennen
   • K. Thonke

   Specil Issue Papers Pages: 555 - 560

10. Epitaxy of FeAl films on GaAs(100) by molecular beam epitaxy

    • J. N. Kuznia
    • A. M. Wowchak
    • P. I. Cohen

    Specil Issue Papers Pages: 561 - 565

11. Detailed structural analysis of GaAs grown on patterned Si

    • M. N. Charasse
    • B. Bartenlian
    • G. Amendola

    Specil Issue Papers Pages: 567 - 573

12. Current-voltage characteristics ofp-Ge/n-GaAs heterojunction diodes grown by molecular beam epitaxy

    • Masafumi Kawanaka
    • Jun’ichi Sone

    Regular Issue Papers Pages: 575 - 580

13. Morphological development during platinum/gallium arsenide interfacial reactions

    • K. J. Schulz
    • X. -Y. Zheng
    • Y. A. Chang

    Regular Issue Papers Pages: 581 - 589

14. Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes onzn-lnP

    • Y. S. Lee
    • W. A. Anderson

    Regular Issue Papers Pages: 591 - 596

15. Effect of substrate orientation on Zn-doping of AIGalnP grown by atmospheric pressure orgamometallic vapor phase epitaxy

    • S. Minagawa
    • M. Kondow

    Regular Issue Papers Pages: 597 - 599