Abstract
The diffusion path and reaction kinetics of Pt/GaAs diffusion couples were investigated in the temperature range 400 to 1000° C using optical metallography, electron probe microanalysis (EPMA), and scanning electron microscopy (SEM). In all cases the formation of two phases, Pt3Ga and PtAs2, was observed. A layered structure Pt/Pt3Ga/ PtAs2/GaAs was observed in the temperature range 400 to 450° C and again between 700 and 800° C. However, in the intermediate temperature range from 450 to 650° C a two-phase mixture was observed with the sequence Pt/Pt3Ga/(Pt3Ga, PtAs2)/GaAs. This two-phase microstructure resulted in faster reaction rates than would have been predicted from the layered kinetics. The reversion from the agglomerate two-phase to a layered microstructure between 650 and 675° C may be explained by a rapid rate of grain coarsening in the two-phase microstructure at high temperature. This return to a planar morphology resulted in a substantial decrease in reaction rate with increasing temperature.
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Schulz, K.J., Zheng, X.Y., Lin, J.C. et al. Morphological development during platinum/gallium arsenide interfacial reactions. J. Electron. Mater. 19, 581–589 (1990). https://doi.org/10.1007/BF02651282
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DOI: https://doi.org/10.1007/BF02651282