Dislocation filtering: why it works, when it doesn’t Brian W. Dodson Specil Issue Papers Pages: 503 - 508
Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers J. M. BallingallPin HoE. L. Hall Specil Issue Papers Pages: 509 - 513
A novel current injected strained quantum well laser grown by MOVPE J. N. TothillJ. H. WilkieM. H. Lyons Specil Issue Papers Pages: 515 - 519
Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinement E. F. SchubertJ. M. KuoR. F. Kopf Specil Issue Papers Pages: 521 - 531
Correlation between photoluminescence data and device performance of p-channel strained-layer materials E. D. JonesT. E. ZipperianL. R. Dawson Specil Issue Papers Pages: 533 - 537
Processing parameters for selective intermixing of GaAs/AIGaAs quantum wells Xin WenJim Y. ChiPaul Melman Specil Issue Papers Pages: 539 - 542
Molecular beam epitaxy of CdSe and the derivative alloys Zn1−x Cd x Se and Cd1−x M x Se N. SamarthH. LuoN. Otsuka Specil Issue Papers Pages: 543 - 547
The stability of α-Sn grown on CdTe by molecular beam epitaxy J. L. RenoL. L. Stephenson Specil Issue Papers Pages: 549 - 553
Structural, electrical and optical characterization of singlecrystal ErAs layers grown on GaAs by MBE J. D. RalstonH. EnnenK. Thonke Specil Issue Papers Pages: 555 - 560
Epitaxy of FeAl films on GaAs(100) by molecular beam epitaxy J. N. KuzniaA. M. WowchakP. I. Cohen Specil Issue Papers Pages: 561 - 565
Detailed structural analysis of GaAs grown on patterned Si M. N. CharasseB. BartenlianG. Amendola Specil Issue Papers Pages: 567 - 573
Current-voltage characteristics ofp-Ge/n-GaAs heterojunction diodes grown by molecular beam epitaxy Masafumi KawanakaJun’ichi Sone Regular Issue Papers Pages: 575 - 580
Morphological development during platinum/gallium arsenide interfacial reactions K. J. SchulzX. -Y. ZhengY. A. Chang Regular Issue Papers Pages: 581 - 589
Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes onzn-lnP Y. S. LeeW. A. Anderson Regular Issue Papers Pages: 591 - 596
Effect of substrate orientation on Zn-doping of AIGalnP grown by atmospheric pressure orgamometallic vapor phase epitaxy S. MinagawaM. Kondow Regular Issue Papers Pages: 597 - 599