Characterization of Mg-doped InP grown by MOCVD using a bis(methylcyclopentadienyl)magnesium dopant source C. BlaauwR. A. BruceA. J. Springthorpe OriginalPaper Pages: 567 - 572
Two-step rapid thermal diffusion of boron into silicon using a boron nitride solid diffusion source Jeong-Gyoo KimChoong-Ki Kim OriginalPaper Pages: 573 - 577
Velocity-field characteristics of electrons in doped GaAs W. Ted MasselinkThomas F. Kuech OriginalPaper Pages: 579 - 584
Influence of MBE growth temperature on GaAs/AlAs resonant tunneling structures A. C. CampbellV. P. KesanB. G. Streetman OriginalPaper Pages: 585 - 588
The use of ICP to determine delivery rates of transportable metal contaminants from metal organic liquid sources D. A. ConditC. H. GerstungA. J. Shuskus OriginalPaper Pages: 593 - 598
Study of nickel contamination on the ultrasonic bondability of gold bond finger of SD-48L packages K. C. LeeS. J. Hu OriginalPaper Pages: 599 - 602
Design and process development of a novel multi-wafer OMVPE reactor for growing very uniform GaAs and AlGaAs epitaxial layers Rong-Ting HuangDumrong KasemsetD. Ackley OriginalPaper Pages: 603 - 609
Reactive ion etch characteristics of thin InGaAs and AlGaAs stop-etch layers C. B. CooperS. SalimianH. F. Macmillan OriginalPaper Pages: 619 - 622
Compositional dependence of thermal stability of refractory metal silicide schottky contacts to GaAs C. P. LeeT. H. LiuS. C. Wu OriginalPaper Pages: 623 - 626
Study of die bond voids on memory semiconductor devices in 24-L cerquad packages K. C. LeeS. J. Hu OriginalPaper Pages: 627 - 631
High density packaging technology ultra thin package & new tab package Osamu NakagawaHaruo ShimamotoIsamu Yamamoto OriginalPaper Pages: 633 - 643
New OMVPE reactor for large area uniform deposition of InP and related alloys S. C. PalmateerS. H. GrovesD. L. Hovey OriginalPaper Pages: 645 - 649
An advanced laser application for controlling of electric resistivity of thick film resistors Hayato TakasagoEishi GofukuYoshiyuki Morihiro OriginalPaper Pages: 651 - 655