Abstract
The use of bis(methylcyclopentadienyl)magnesium (MCp2Mg) as ap-dopant source for MOCVD-grown InP has been investigated. The Mg incorporation was nonlinear. The relationship between the H2 flow through the MCp2Mg bubbler and the Mg concentra-tion in the epilayers suggested that when [Mg] <20 ppb in the reactor it was mostly depleted from the gas mixture, probably by means of reaction with O2 or H2O, but at higher concentrations a large fraction of the Mg diffusing to the epilayers was incor-porated. For concentrations >1019 cms-3 the layer morphology deteriorated and stacking faults were observed by TEM, at a density greater than 109 cms−2. Significant diffusion of Mg into the substrates during the growth was observed, with diffusion depths up to 0.1 µm at a concentration of 1019 cms−3 in S-doped, and up to 32 µm at 1017 cms-3 in Fe-doped substrates. These concentrations correspond to the S and Fe doping level in those substrates, and the results are explained in terms of the formation of a complex between the S or Fe dopants and the diffusing Mg, which immobilizes the latter species. At [Mg] >1018 cms−3, the net hole concentration, measured by means of electrochemical C-V pro-filing, decreases with increasing [Mg], indicating significant self compensation. Com-pensation at high [Mg] was also suggested by the effect of excitation power density on the peak shift of the donor to acceptor transition observed during photoluminescence measurements at 7 K.
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Blaauw, C., Bruce, R.A., Miner, C.J. et al. Characterization of Mg-doped InP grown by MOCVD using a bis(methylcyclopentadienyl)magnesium dopant source. J. Electron. Mater. 18, 567–572 (1989). https://doi.org/10.1007/BF02657467
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DOI: https://doi.org/10.1007/BF02657467