1. Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures

   • F. G. Kellert
   • J. S. Whelan
   • K. T. Chan

   OriginalPaper Pages: 355 - 360

2. Epitaxial layer thickness measurements by reflection spectroscopy

   • L. E. Tarof
   • C. J. Miner
   • A. J. Springthorpe

   OriginalPaper Pages: 361 - 367

3. In situ FTIR and surface analysis of the reaction of trimethylgallium and ammonia

   • D. Mazzarese
   • A. Tripathi
   • D. W. Eckart

   OriginalPaper Pages: 369 - 377

4. Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures

   • R. L. Tober
   • J. Pamulapati
   • J. E. Oh

   OriginalPaper Pages: 379 - 384

5. C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

   • F. T. Brady
   • S. S. Li
   • W. A. Krull

   OriginalPaper Pages: 385 - 389

6. Identification of the acceptor level V^3+/2+ in GaAs and a new experimental observation of V² in “low spin” ground state in GaAs

   • G. Bremond
   • N. Hizem
   • W. Ulrici

   OriginalPaper Pages: 391 - 397

7. Effects of In and Sb doping in LPE growth thermodynamics and in GaAs layer qualities

   • J. F. Chen
   • C. R. Wie

   OriginalPaper Pages: 399 - 406

8. The formation of subgrain boundaries in GaAs single crystals

   • H. Lessoff
   • R. Gorman

   OriginalPaper Pages: 407 - 410

9. Filling of light emitting diode via-holes by MOCVD

   • E. S. Johnson
   • G. E. Legg

   OriginalPaper Pages: 411 - 419

10. Explicit incorporation of the energy-band structure into an analysis of the defect chemistry of PbTe and SnTe

    • Yi Gao Sha
    • Robert F. Brebrick

    OriginalPaper Pages: 421 - 443

11. Annealing effects in the Ag/Al-(100) InP system: Al redistribution and film recrystallization

    • J. Dunn
    • H. R. Jen
    • G. B. Stringfellow

    OriginalPaper Pages: 445 - 451

12. Characterization of MOCVD-grown CdMnTe films by infrared spectroscopy

    • R. Sudharsanan
    • Z. C. Feng
    • A. Erbil

    OriginalPaper Pages: 453 - 455

13. Pyrolysis of tertiarybutylphosphine

    • S. H. Li
    • C. A. Larsen
    • G. B. Stringfellow

    OriginalPaper Pages: 457 - 464

14. Material characterization of an ion-implantation process for p-type (InGa)As/GaAs quantum-well structures

    • D. R. Myers
    • E. D. Jones
    • J. E. Schirber

    OriginalPaper Pages: 465 - 472