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The formation of subgrain boundaries in GaAs single crystals

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Abstract

The formation of subgrain boundaries is observed in GaAs wafers grown by a variety of methods. After heating, subgrain boundaries are revealed both by enhanced oxidation and chemical etching. The mechanism of the subgrain boundary formation apparently is the relief of surface stress by dislocation glide on the application of heat. Temperatures as low as 300 degrees appear sufficient for the formation of surface polygonization. The amount of polygonization appears to be related to the growth procedure.

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Authors and Affiliations

  1. Naval Research Laboratory, 20375-5000, Washington, DC

    H. Lessoff & R. Gorman

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  1. H. Lessoff
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  2. R. Gorman
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Lessoff, H., Gorman, R. The formation of subgrain boundaries in GaAs single crystals. J. Electron. Mater. 18, 407–410 (1989). https://doi.org/10.1007/BF02657990

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  • DOI: https://doi.org/10.1007/BF02657990

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