1. Effects of various implant species and post-anneal treatments on SI N-channel MOSFETs

   • W. F. Tseng
   • R. H. Hevey
   • G. E. Davis

   OriginalPaper Pages: 1 - 6

2. Processing characteristics of tin and tungsten oxides relevant to production of gas sensors

   • H. Torvela
   • T. Jaakola
   • S. Leppävuori

   OriginalPaper Pages: 7 - 11

3. OMVPE growth of 660 nm AIGaAs double heterojunction LEDs

   • F. G. Kellert
   • R. L. Moon

   OriginalPaper Pages: 13 - 19

4. Determination of the si-conducting polymer interfacial properties using A-C impedance techniques

   • G. Nagasubramanian
   • Salvador Stefano
   • Jo Moacanin

   OriginalPaper Pages: 21 - 25

5. Photo CVD system for silicon nitride film

   • Y. Numasawa
   • K. Yamazaki
   • K. Hamano

   OriginalPaper Pages: 27 - 30

6. Rapid Thermal annealing of si implanted GaAs

   • Y. J. Chan
   • M. S. Lin

   OriginalPaper Pages: 31 - 36

7. Molecular beam epitaxy of in_1-xGa_xAS_yP_1-y(y ≃2.2 ×) lattice matched to InP using gas cells

   • D. Huet
   • M. Lambert

   OriginalPaper Pages: 37 - 40

8. Studies of the Ga_1-xIn_xAs_1-ySb_y quaternary alloy system I. liquid-phase epitaxial growth and assessment

   • M. Astles
   • H. Hill
   • M. L. Young

   OriginalPaper Pages: 41 - 49

9. Studies of the Ga_1-xI^As_1-ySb_y quaternary alloy system:-II characterisation by far-infrared reflectance spectroscopy

   • C. Pickering

   OriginalPaper Pages: 51 - 56