Abstract
The liquid phase epitaxial (LPE) growth of Ga1-xInxAs1-ySby alloys lattice-matched to InAs and GaSb substrates has been investigated in the temperature range 520 to 600° C. Theoretical phase diagram calculations have been used to obtain good predictions of the liquid phase compositions required to obtain lattice-matched growth as a function of growth temperature. The relative merits of InAs and GaSb as substrates are discussed. The layers were assessed by single and double-crystal X-ray diffraction, electron beam microprobe analysis and photoresponse of electrolyte Schottky barriers. Good agreement between alloy composition(x, y) measured by microprobe analysis and that deduced from combined lattice parameter and band-gap measurements. The problem of compositional grading in thicker layers due to depletion of arsenic in the growth solution is discussed. To overcome this problem it is necessary to reduce the growth rate of the layer by reducing the cooling rate to ∼1° C hr-1.
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Astles, M., Hill, H., Williams, A.J. et al. Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment. J. Electron. Mater. 15, 41–49 (1986). https://doi.org/10.1007/BF02649949
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DOI: https://doi.org/10.1007/BF02649949