Effects of various implant species and post-anneal treatments on SI N-channel MOSFETs W. F. TsengR. H. HeveyG. E. Davis OriginalPaper Pages: 1 - 6
Processing characteristics of tin and tungsten oxides relevant to production of gas sensors H. TorvelaT. JaakolaS. Leppävuori OriginalPaper Pages: 7 - 11
OMVPE growth of 660 nm AIGaAs double heterojunction LEDs F. G. KellertR. L. Moon OriginalPaper Pages: 13 - 19
Determination of the si-conducting polymer interfacial properties using A-C impedance techniques G. NagasubramanianSalvador StefanoJo Moacanin OriginalPaper Pages: 21 - 25
Photo CVD system for silicon nitride film Y. NumasawaK. YamazakiK. Hamano OriginalPaper Pages: 27 - 30
Molecular beam epitaxy of in1-xGaxASyP1-y(y ≃2.2 ×) lattice matched to InP using gas cells D. HuetM. Lambert OriginalPaper Pages: 37 - 40
Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment M. AstlesH. HillM. L. Young OriginalPaper Pages: 41 - 49
Studies of the Ga1-xI^As1-ySby quaternary alloy system:-II characterisation by far-infrared reflectance spectroscopy C. Pickering OriginalPaper Pages: 51 - 56