1. Neutron transmutation doping of high purity GaAs

   • T. S. Low
   • M. H. Kim
   • G. E. Stillman

   OriginalPaper Pages: 477 - 511

2. The existence region of the Hg_0.8Cd_0.2Te phase field

   • H. F. Schaake

   OriginalPaper Pages: 513 - 530

3. Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia

   • I. Golecki
   • R. L. Maddox
   • H. M. Manasevit

   OriginalPaper Pages: 531 - 550

4. Far infrared characterization of Hg_1-xCd_xTe and related electronic materials

   • S. Perkowitz

   OriginalPaper Pages: 551 - 562

5. The effect of gas temperature on the growth of InP by atomspheric pressure metal-organic chemical vapor deposition using trimethyl indium and PH₃ sources

   • J. L. Zilko
   • D. L. Van Haren
   • S. Y. Leung

   OriginalPaper Pages: 563 - 572

6. Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD

   • M. Shimozuma
   • K. Kitamori
   • H. Tagashira

   OriginalPaper Pages: 573 - 586

7. The quartz-envelope heater: A new heater for metal-organic chemical vapor deposition systems

   • S. I. Boldish
   • J. S. Ciofalo
   • J. P. Wendt

   OriginalPaper Pages: 587 - 615

8. Properties of thin LPCVD silicon oxynitride films

   • P. Pan
   • J. Abernathey
   • C. Schaefer

   OriginalPaper Pages: 617 - 632

9. MOCVD epitaxial growth of single crystal GaN, AlN and Al_xGa_1-xN

   • M. Matloubian
   • M. Gershenzon

   OriginalPaper Pages: 633 - 644