1. Characterization of defects in hydrogenated amorphous silicon devices using charge collection scanning electron microscopy

   • B. G. Yacobi
   • R. J. Matson
   • C. R. Herrington

   OriginalPaper Pages: 843 - 854

2. Surface treatment of GaSb substrate and extremely low temperature LPE growth of AlGaSb

   • Y. Takeda
   • S. Noda
   • A. Sasaki

   OriginalPaper Pages: 855 - 866

3. Open-tube vapor transport epitaxy of Hg_1−xCd_xTe

   • Y. Nemirovsky
   • A. Kepten

   OriginalPaper Pages: 867 - 895

4. Rapid capless annealing of²⁸Si,⁶⁴Zn, and⁹Be implants in GaAs

   • S. G. Liu
   • S. Y. Narayan

   OriginalPaper Pages: 897 - 911

5. Characteristics of thermally nitrided silicon dioxide film and plasma enhancement

   • I. Kato
   • T. Ito
   • H. Ishikawa

   OriginalPaper Pages: 913 - 929

6. Non-destructive characterization of electrical uniformity in semi-insulating GaAs substrates by microwave photoconductance technique

   • Hideki Hasegawa
   • Hideo Ohno
   • Shouhei Seki

   OriginalPaper Pages: 931 - 948

7. Crystalline properties of multiple BP-Si layers grown on silicon substrate

   • S. Sugiura
   • T. Yoshida
   • D. J. Dumin

   OriginalPaper Pages: 949 - 954

8. Effects of differential etching and masking resist preparation on the quality of the reactive-ion-etched aluminum and aluminum alloys

   • Shih-Chia Chang

   OriginalPaper Pages: 955 - 967

9. Evidence for transient composition variations at GaAs/Ga_1−xAl_xAs heterostructure interfaces prepared by metal-organic chemical vapour deposition

   • E. J. Thrush
   • G. Wale-Evans
   • R. J. M. Griffiths

   OriginalPaper Pages: 969 - 988

10. Advances in LEC growth of InP crystals

    • G. W. Iseler

    OriginalPaper Pages: 989 - 1011