Abstract
A novel set-up for horizontal open-tube vapor transport epitaxy of Hg1−xCdxTe films is described. Mirror-like Hg1−xCdxTe epitaxial layers with thicknesses up to 40 Μm were grown and characterized. The growth temperature ranged from 380 to 550‡C, with growth rates of the order of 0.5–7 Μm per hour. The concentration depth profiles and the optical and electrical properties of relatively uniform films with x≈0.3–0.4 are reported. The process kinetics are studied. A simple model which takes into account the reactions occurring at the boundaries of the epitaxial layer and the interdiffusion in the epilayer is presented and discussed. The model fits the experimentally observed characteristics of the epitaxial growth process. A constant growth rate leading to a linear dependence of film thickness upon deposition time y–yi=ks t is derived. The reaction rate constant k is given by ks=koe−Ea/kT with ko=0.18 cm-sec−1and the energy of activation Ea=1.12 eV.
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Nemirovsky, Y., Kepten, A. Open-tube vapor transport epitaxy of Hg1−xCdxTe. J. Electron. Mater. 13, 867–895 (1984). https://doi.org/10.1007/BF02655305
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DOI: https://doi.org/10.1007/BF02655305