1. Defect chemistry and intrinsic carrier concentration for Hg_1−x Cd_x Te(s) for x = 0.20, 0.40, and 1.0

   • Ching-Hua Su
   • Pok-Kai Liao
   • R. F. Brebrick

   OriginalPaper Pages: 771 - 826

2. Infrared reflectance and absorption of N-type InP

   • O. K. Kim
   • W. A. Bonner

   OriginalPaper Pages: 827 - 836

3. A Chemical thinning technique for transmission electron microscopy cross-sectional samples

   • R. J. Gaboriaud

   OriginalPaper Pages: 837 - 844

4. Simox technology and its application to CMOS LSIS

   • K. Izumi
   • Y. Ōmura
   • T. Sakai

   OriginalPaper Pages: 845 - 861

5. Self-Diffusion in gallium arsenide

   • H. D. Palfrey
   • M. Brown
   • A. F. W. Willoughby

   OriginalPaper Pages: 863 - 877

6. Measurement of impurities in a multi-doped sample of cadmium mercury telluride

   • J. B. Clegg
   • J. B. Mullin
   • R. Snook

   OriginalPaper Pages: 879 - 889

7. High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen

   • Akira Usui
   • Hisatsune Watanabe

   OriginalPaper Pages: 891 - 902

8. The preparation and characterization of strained-layer superlattices in the GaAs + GaP System

   • R. M. Blefeld
   • G. C. Osbourn
   • I. J. Fritz

   OriginalPaper Pages: 903 - 915