Abstract
It has been shown that measurement of the infrared reflectance minimum frequency offers a simple, non-destructive method to determine carrier densities of n-type InP. Free carrier absorption has been measured for InP with carrier densities of 0.4-9 × l018/cm3 in the spectral range of 1.1-l0μm and discussed in terms of optical phonon scattering and impurity scattering. In particular, the absorption at λ= 1.3μm should be considered in the design of long wavelength photodetectors and light emitting diodes to improve external quantum efficiencies.
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Kim, O.K., Bonner, W.A. Infrared reflectance and absorption of N-type InP. J. Electron. Mater. 12, 827–836 (1983). https://doi.org/10.1007/BF02655296
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DOI: https://doi.org/10.1007/BF02655296