Stability of conductor metallizations in corrosive environments A. T. EnglishP. A. Turner OriginalPaper Pages: 1 - 15
Epitaxial GaP by a semi-sealed dip process for high efficiency red LED's R. SolomonD. DeFevere OriginalPaper Pages: 25 - 37
Boron and nitrogen im gallium phosphide grown by the liquid encapsulated czochralski process E. C. Lightowlers OriginalPaper Pages: 38 - 52
Prevention of diffusion-induced defects in the fabrication of diffused electroluminescent GaP devices L. C. LutherH. C. CaseyG. A. Rozgonyi OriginalPaper Pages: 53 - 75
Relation of GaAsP light emitter efficiency to zinc diffusion spike density R. A. ChapmanG. R. CroninK. R. Carson OriginalPaper Pages: 76 - 93
Properties of high-efficiency zinc-diffused Ga1-xAlxAs light-emitting diodes E. G. Dierschke OriginalPaper Pages: 94 - 109
Growth of thick GaxAl1-xAs layers by liquid-phase epitaxy L. E. StoneK. MaddenR. W. Haisty OriginalPaper Pages: 110 - 126
High quality tellurium dioxide for acousto-optic and non-linear applications W. A. BonnerS. SinghA. W. Warner OriginalPaper Pages: 154 - 164
Characteristics of In2O3:Sn films prepared by reactive r-f sputtering John M. Pankratz OriginalPaper Pages: 181 - 189
Preparation and properties of Pb-xCdxS A. R. CalawaJ. A. MroczkowskiT. C. Harman OriginalPaper Pages: 190 - 200
Design-technology-reliability interactions in Al/CVD-SiO2 multilayer IC's M. A. SchusterD. S. HermanR. M. Gerber OriginalPaper Pages: 201 - 211
