Abstract
The phase diagram of the Pb1-xCdxS alloy system has been investigated in the composition range 0 ≤ x ≤ 0. 6. The liquidus and solidus lines throughout this range were determined by differential thermal analysis. Powder X-ray measurements were used to determine the lattice parameters of several compositions. The solubility of CdS in PbS is extremely retrograde, decreasing from approximately 0. 38 mole fraction CdS at 1052°C to 0. 026 mole fraction CdS at 500°C.
Diodes were fabricated from Pb1-xCdxS crystals with compositions in the x = 0 to x = 0.186 range. N-type crystals were vapor-grown in a closed tube system from metal-rich ingots of (Pb1-xCdx)0.51S0.49. The p-n junctions were formed by isothermal diffusion from a sulfur-rich source.
Diode laser emission was observed at 4.2°K from Pb0.985Cd0.015S and Pb0.942Cd0.058S at wavelengths which correspond to energy gaps of 0. 35 eV and 0.49 eV respectively. Although diodes with x = 0.131 and 0.186 exhibited good current-voltage characteristics with high rectification ratios, no laser emission was observed. The temperature dependence of the energy gap was obtained from 4.2°K to 200°K for x = 0, 0. 058, and 0.079.
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This work was sponsored by the Department of the Air Force
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Calawa, A.R., Mroczkowski, J.A. & Harman, T.C. Preparation and properties of Pb-xCdxS. J. Electron. Mater. 1, 190–200 (1972). https://doi.org/10.1007/BF02660362
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DOI: https://doi.org/10.1007/BF02660362