1. Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms

   • N. T. Bagraev
   • S. A. Kukushkin
   • V. L. Ugolkov

   OriginalPaper 30 August 2022 Pages: 321 - 324

   

2. Study of Triboelectric Charges in Thin Dielectric and Semiconductor Films by SPM Methods

   • E. V. Gushchina
   • D. A. Malykh
   • M. S. Dunaevsky

   OriginalPaper 30 August 2022 Pages: 325 - 328

   

3. Bimodality in the Electroluminescence Spectra of InGaAs Quantum Well–Dot Nanostructures

   • A. A. Kharchenko
   • A. M. Nadtochiy
   • S. Breuer

   OriginalPaper 30 August 2022 Pages: 329 - 332

   

4. Polariton Resonance in the Self-Modulation of the Asymmetric State of a Superradiant Laser

   • E. R. Kocharovskaya
   • A. V. Mishin
   • V. V. Kocharovsky

   OriginalPaper 30 August 2022 Pages: 333 - 339

   

5. GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

   • Y. E. Maidebura
   • T. V. Malin
   • K. S. Zhuravlev

   OriginalPaper 30 August 2022 Pages: 340 - 345

   

6. A Model for Multiparametric Analysis of the Parameters of Short-Channel HEMT-Type Transistors

   • A. D. Nedoshivina
   • I. V. Makartsev
   • S. V. Obolensky

   OriginalPaper 30 August 2022 Pages: 346 - 351

   

7. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

   • I. V. Osinnykh
   • T. V. Malin
   • K. S. Zhuravlev

   OriginalPaper 30 August 2022 Pages: 352 - 359

   

8. Leakage Current through the Gate Dielectric in Transistors with Channel Lengths of up to 100 nm

   • T. A. Shobolova
   • V. V. Gasenin
   • S. V. Obolenskii

   OriginalPaper 30 August 2022 Pages: 360 - 366