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Study of Triboelectric Charges in Thin Dielectric and Semiconductor Films by SPM Methods

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Abstract

Scanning probe microscopy investigations of triboelectric charges on thin films of high-k dielectrics LaScO3, MoSe2 semiconductor “flakes”, PZT films are carried out. It is shown that the value of the accumulated triboelectric charge in these films depends on their thickness. The strongest effect is observed in the LaScO3 film 6 nm thick and the PZT film 100 nm thick. The dependence of the value of the measured triboelectric potential on the pressing force and the probe material is also experimentally found.

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ACKNOWLEDGMENTS

The study was supported by the Russian Science Foundation, grant no. 22-22-20084 (https://rscf.ru/project/22-22-20084/) and by the St. Petersburg Science Foundation, grant no. 24/2022 from April 14, 2022.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    E. V. Gushchina, D. A. Malykh & M. S. Dunaevsky

Authors
  1. E. V. Gushchina
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  2. D. A. Malykh
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  3. M. S. Dunaevsky
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Correspondence to E. V. Gushchina.

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Translated by V. Bukhanov

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Gushchina, E.V., Malykh, D.A. & Dunaevsky, M.S. Study of Triboelectric Charges in Thin Dielectric and Semiconductor Films by SPM Methods. Semiconductors 56, 325–328 (2022). https://doi.org/10.1134/S1063782622070028

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  • DOI: https://doi.org/10.1134/S1063782622070028

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