1. Investigation of the Magnesium Impurity in Silicon

   • L. M. Portsel
   • V. B. Shuman
   • Yu. A. Astrov

   NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 28 April 2020 Pages: 393 - 398

   

2. Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors

   • R. P. Seisyan
   • S. A. Vaganov

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 28 April 2020 Pages: 399 - 402

   

3. Dielectric Spectroscopy and Mechanism of the Semiconductor–Metal Phase Transition in Doped VO₂:Ge and VO₂:Mg Films

   • A. V. Ilinskiy
   • R. A. Kastro
   • E. B. Shadrin

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 28 April 2020 Pages: 403 - 411

   

4. Raman Scattering in the InSb–MnSb Eutectic Composite

   • I. Kh. Mammadov
   • D. H. Arasly
   • A. A. Khalilova

   SPECTROSCOPY, INTERACTION WITH RADIATION 28 April 2020 Pages: 412 - 416

   

5. Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

   • P. V. Seredin
   • D. L. Goloshchapov
   • S. A. Kukushkin

   SPECTROSCOPY, INTERACTION WITH RADIATION 28 April 2020 Pages: 417 - 425

   

6. Dependence of the Crystallization Kinetics of Cr_0.26Si_0.74 Thin Films on Their Thickness

   • S. V. Novikov
   • V. S. Kuznetsova
   • J. Schumann

   SURFACES, INTERFACES, AND THIN FILMS 28 April 2020 Pages: 426 - 428

   

7. Size Quantization in n-GaP

   • V. R. Rasulov
   • P. Ya. Rasulov
   • R. R. Sultonov

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 28 April 2020 Pages: 429 - 432

   

8. On the Dominant Mechanism of the Nonradiative Excitation of Manganese Ions in II–VI Diluted Magnetic Semiconductors

   • A. V. Chernenko

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 28 April 2020 Pages: 433 - 436

   

9. Modification of the Photoelectric Properties of Undoped Hydrogenated Amorphous Silicon Films under Preliminary Illumination at Elevated Temperatures

   • N. N. Ormont
   • I. A. Kurova

   AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 28 April 2020 Pages: 437 - 440

   

10. Growth and Characterization of TCNQ-Doped Ni(II)TAAB Thin Film As a New π-Conjugated Organic Semiconductor

    • M. E. Sánchez-Vergara
    • B. Molina
    • R. Salcedo

    AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 28 April 2020 Pages: 441 - 449

    

11. Multilevel Recording in Ge₂Sb₂Te₅ Thin Films

    • S. A. Fefelov
    • L. P. Kazakova
    • A. O. Yakubov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 28 April 2020 Pages: 450 - 453

    

12. Study of the Properties of Two-Dimensional MoS₂ and WS₂ Films Synthesized by Chemical-Vapor Deposition

    • S. A. Smagulova
    • P. V. Vinokurov
    • I. V. Antonova

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 28 April 2020 Pages: 454 - 464

    

13. Terahertz Photoconductivity in Graphene in a Magnetic Field

    • Yu. B. Vasiliev
    • S. N. Novikov
    • S. D. Ganichev

    CARBON SYSTEMS 28 April 2020 Pages: 465 - 470

    

14. Surface Modification of SOI Sensors for the Detection of RNA Biomarkers

    • O. V. Naumova
    • B. I. Fomin
    • D. V. Pyshnyi

    PHYSICS OF SEMICONDUCTOR DEVICES 28 April 2020 Pages: 471 - 475

    

15. Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters

    • V. M. Emelyanov
    • N. A. Kalyuzhnyy
    • M. Z. Shvarts

    PHYSICS OF SEMICONDUCTOR DEVICES 28 April 2020 Pages: 476 - 483

    

16. Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

    • I. S. Shashkin
    • A. Y. Leshko
    • P. S. Kop’ev

    PHYSICS OF SEMICONDUCTOR DEVICES 28 April 2020 Pages: 484 - 488

    

17. Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide

    • I. S. Shashkin
    • A. Y. Leshko
    • P. S. Kop’ev

    PHYSICS OF SEMICONDUCTOR DEVICES 28 April 2020 Pages: 489 - 494

    

18. Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy

    • A. E. Aslanyan
    • L. P. Avakyants
    • A. A. Marmalyuk

    PHYSICS OF SEMICONDUCTOR DEVICES 28 April 2020 Pages: 495 - 500

    

19. TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs

    • P. Vimala
    • T. S. Arun Samuel

    PHYSICS OF SEMICONDUCTOR DEVICES 28 April 2020 Pages: 501 - 505

    

20. Features of SiO₂ Layers Synthesized on Silicon by Molecular Layer Deposition

    • A. P. Baraban
    • E. A. Denisov
    • R. P. Seisyan

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 28 April 2020 Pages: 506 - 510