Abstract
The current–voltage characteristics of InxGa1 –xAs/GaAs metamorphic photovoltaic converters with built-in n-InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0.025–0.24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs–n:Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0.32–0.36 eV and a substantial width. To suppress this effect, the technology of the Te doping of n-InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm2. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed.
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The study was financially supported by the Russian Foundation for Basic Research under research project no. 16-29-03216.
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Translated by M. Tagirdzhanov
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Emelyanov, V.M., Kalyuzhnyy, N.A., Mintairov, S.A. et al. Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters. Semiconductors 54, 476–483 (2020). https://doi.org/10.1134/S1063782620040053
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DOI: https://doi.org/10.1134/S1063782620040053