1. Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)

   • S. A. Karandashev
   • B. A. Matveev
   • M. A. Remennyi

   REVIEW 23 April 2019 Pages: 139 - 149

   

2. Features of the Properties of Rare-Earth Semiconductors

   • V. V. Kaminski
   • N. V. Sharenkova

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 23 April 2019 Pages: 150 - 152

   

3. Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

   • N. A. Sobolev
   • O. V. Aleksandrov
   • N. S. Melesov

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 23 April 2019 Pages: 153 - 155

   

4. Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

   • N. A. Sobolev
   • A. E. Kalyadin
   • C. G. Simakin

   SPECTROSCOPY, INTERACTION WITH RADIATION 23 April 2019 Pages: 156 - 159

   

5. Laser Annealing of Thin ITO Films on Flexible Organic Substrates

   • L. S. Parshina
   • O. A. Novodvorsky
   • P. A. Shchur

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 160 - 164

   

6. Structural, Optical, and Photosensitive Properties of PbS Films Deposited in the Presence of CaCl₂

   • L. N. Maskaeva
   • E. V. Mostovshchikova
   • V. I. Voronin

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 165 - 171

   

7. Technique for the Formation of Antireflection Coatings Based on ITO Films

   • L. K. Markov
   • A. S. Pavluchenko
   • I. P. Smirnova

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 172 - 179

   

8. Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

   • S. A. Kukushkin
   • A. M. Mizerov
   • M. S. Sobolev

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 180 - 187

   

9. Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface

   • N. V. Bondar
   • M. S. Brodyn
   • T. G. Beynik

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 188 - 194

   

10. Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

    • A. A. Bloshkin
    • A. I. Yakimov
    • A. V. Dvurechenskii

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 195 - 199

    

11. Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

    • N. Yu. Gordeev
    • A. S. Payusov
    • M. V. Maximov

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 200 - 204

    

12. Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light

    • L. S. Basalaeva
    • Yu. V. Nastaushev
    • E. I. Moiseev

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 205 - 209

    

13. Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga₂Se₃) Structures

    • A. M. Pashayev
    • B. H. Tagiyev
    • I. Z. Sadikhov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 210 - 214

    

14. Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

    • A. P. Novitskii
    • I. A. Serhiienko
    • V. V. Khovaylo

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 215 - 219

    

15. Thermoresistive Semiconductor SiC/Si Composite Material

    • S. K. Brantov
    • E. B. Yakimov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 220 - 223

    

16. Optical Properties of Polyethylene Filled with Bi₂Te₃ Nanocrystallites

    • A. Yu. Gamzayeva
    • E. G. Alizade
    • S. A. Nemov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 224 - 228

    

17. Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates

    • M. B. Shalimova
    • N. V. Sachuk

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 229 - 233

    

18. Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent

    • E. A. Grebenshchikova
    • V. G. Sidorov
    • Yu. P. Yakovlev

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 234 - 236

    

19. Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers

    • E. V. Erofeev
    • I. V. Fedin
    • A. P. Fazleev

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 237 - 240

    

20. Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers

    • I. E. Tyschenko
    • I. V. Popov
    • E. V. Spesivtsev

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 241 - 245

    

21. Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates

    • G. B. Galiev
    • E. A. Klimov
    • S. S. Pushkarev

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 246 - 254

    

22. Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering

    • S. V. Zaitsev
    • V. S. Vaschilin
    • E. I. Evtushenko

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 255 - 259

    

23. On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method

    • R. V. Levin
    • V. N. Nevedomskyi
    • M. N. Mizerov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 260 - 263

    

24. Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves

    • N. A. Viglin
    • I. V. Gribov
    • E. I. Patrakov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 264 - 267

    

25. Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile

    • D. S. Frolov
    • G. E. Yakovlev
    • V. I. Zubkov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 268 - 272