1. Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures

   • N. G. Yaremenko
   • V. A. Strakhov
   • M. V. Karachevtseva

   BASIC RESEARCH 09 January 2020 Pages: 1975 - 1978

   

2. Determination of the Bulk Conductivity of III–V Semiconductors in a Strong Constant Electric Field and under Harmonic Effects

   • I. V. Malyshev
   • K. A. Fil
   • O. A. Goncharova

   BASIC RESEARCH 09 January 2020 Pages: 1979 - 1982

   

3. State of the Surface of Polycrystalline Silver after Exposure to Activated Oxygen

   • O. G. Ashkhotov
   • S. A. Khubezhov
   • I. B. Ashkhotova

   ELECTRONICS MATERIALS 09 January 2020 Pages: 1983 - 1985

   

4. Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation

   • Ya. S. Grishina
   • N. I. Borgardt
   • A. I. Savitskiy

   ELECTRONICS MATERIALS 09 January 2020 Pages: 1986 - 1991

   

5. Dependence of the Surface Morphology and Structure of CuIn_0.95Ga_0.05Se₂ Films on the Selenization Temperature

   • T. M. Gadzhiev
   • M. A. Aliev
   • Z. V. Shomakhov

   ELECTRONICS MATERIALS 09 January 2020 Pages: 1992 - 1998

   

6. Optical Properties of Composite Materials Based on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-Phenylenevinylene] and Titanium Dioxide in the Mid-IR Spectral Range

   • I. A. Belogorokhov
   • L. I. Belogorokhova

   ELECTRONICS MATERIALS 09 January 2020 Pages: 1999 - 2001

   

7. Mathematical Model of the Evaporation of Amalgam Components in Discharge Radiation Sources

   • N. Yu. Petrenko
   • S. V. Puchnina
   • S. A. Gavrilov

   TECHNOLOGICAL PROCESSES AND ROUTES 09 January 2020 Pages: 2002 - 2006

   

8. Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds

   • E. N. Vigdorovich

   TECHNOLOGICAL PROCESSES AND ROUTES 09 January 2020 Pages: 2007 - 2011

   

9. Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC

   • V. I. Egorkin
   • V. E. Zemlyakov
   • V. I. Garmash

   TECHNOLOGICAL PROCESSES AND ROUTES 09 January 2020 Pages: 2012 - 2015

   

10. Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques

    • S. D. Fedotov
    • E. M. Sokolov
    • S. P. Timoshenkov

    TECHNOLOGICAL PROCESSES AND ROUTES 09 January 2020 Pages: 2016 - 2023

    

11. Study of the Formation Process of Memristor Structures Based on Copper Sulfide

    • A. N. Belov
    • A. A. Golishnikov
    • V. I. Shevyakov

    TECHNOLOGICAL PROCESSES AND ROUTES 09 January 2020 Pages: 2024 - 2028

    

12. Precession of Magnetization of a Spin-Valve Free Layer and Its Switching under the Effect of a Magnetic Field Perpendicular to the Anisotropy Axis

    • Iu. A. Iusipova

    ELEMENTS OF INTEGRATED ELECTRONICS 09 January 2020 Pages: 2029 - 2036

    

13. Field-Emission Cathodes Based on Microchannel Plates

    • Z. M. Khamdokhov
    • Z. Ch. Margushev
    • M. D. Bavizhev

    ELEMENTS OF INTEGRATED ELECTRONICS 09 January 2020 Pages: 2037 - 2039

    

14. Investigation of the Temperature Effect on the Output Parameters of Radioisotope Sources of Electricity Based on Double Energy Conversion of Radiative Decay

    • S. G. Novikov
    • A. V. Berintsev
    • V. V. Svetukhin

    ELEMENTS OF INTEGRATED ELECTRONICS 09 January 2020 Pages: 2040 - 2043