1. Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

   • A. I. Titov
   • K. V. Karabeshkin
   • A. I. Struchkov

   NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 06 November 2019 Pages: 1415 - 1418

   

2. Temperature Coefficient of Movement of the Resonance Level of Iron in Pb_{1 – x – y}Sn_xFe_yTe Alloys

   • E. P. Skipetrov
   • B. B. Kovalev
   • V. E. Slynko

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 06 November 2019 Pages: 1419 - 1426

   

3. Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

   • S. G. Cherkova
   • V. A. Skuratov
   • V. A. Volodin

   SPECTROSCOPY, INTERACTION WITH RADIATION 06 November 2019 Pages: 1427 - 1430

   

4. Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time

   • N. N. Ageeva
   • I. L. Bronevoi
   • A. N. Krivonosov

   SURFACES, INTERFACES, AND THIN FILMS 06 November 2019 Pages: 1431 - 1438

   

5. Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd_{3 –x}Mn_xAs₂ Films

   • A. B. Mekhiya
   • A. A. Kazakov
   • B. A. Aronzon

   SURFACES, INTERFACES, AND THIN FILMS 06 November 2019 Pages: 1439 - 1444

   

6. Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon

   • D. M. Samosvat
   • O. P. Chikalova-Luzina
   • G. G. Zegrya

   SURFACES, INTERFACES, AND THIN FILMS 06 November 2019 Pages: 1445 - 1456

   

7. Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films

   • P. N. Krylov
   • A. S. Alalykin
   • I. V. Fedotova

   SURFACES, INTERFACES, AND THIN FILMS 06 November 2019 Pages: 1457 - 1464

   

8. Structure and Electrical Properties of (ZnO/SiO₂)₂₅ Thin Films

   • M. N. Volochaev
   • Yu. E. Kalinin
   • V. V. Bassarab

   SURFACES, INTERFACES, AND THIN FILMS 06 November 2019 Pages: 1465 - 1471

   

9. Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

   • G. S. Gagis
   • R. V. Levin
   • V. I. Vasil’ev

   SURFACES, INTERFACES, AND THIN FILMS 06 November 2019 Pages: 1472 - 1478

   

10. Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions

    • V. Yu. Davydov
    • V. N. Jmerik
    • S. V. Ivanov

    SURFACES, INTERFACES, AND THIN FILMS 06 November 2019 Pages: 1479 - 1488

    

11. Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

    • A. M. Nadtochiy
    • S. A. Mintairov
    • A. E. Zhukov

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 06 November 2019 Pages: 1489 - 1495

    

12. On the Anisotropic Trigger Electrical Properties of Two-Dimensional Superlattices

    • D. V. Zav’yalov
    • V. I. Konchenkov
    • S. V. Kryuchkov

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 06 November 2019 Pages: 1496 - 1499

    

13. Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System

    • A. I. Isayev
    • S. I. Mekhtiyeva
    • R. I. Alekberov

    AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 06 November 2019 Pages: 1500 - 1506

    

14. Structure of Se₉₅As₅ Chalcogenide Glassy Semiconductor Doped by EuF₃ Impurity

    • S. N. Garibova
    • A. I. Isayev
    • S. U. Atayeva

    AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 06 November 2019 Pages: 1507 - 1510

    

15. Spectra of SmS Films in the Far- and Mid-Infrared Regions

    • Yu. V. Ulashkevich
    • V. V. Kaminski
    • N. V. Sharenkova

    AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 06 November 2019 Pages: 1511 - 1513

    

16. Formation of ncl-Si in the Amorphous Matrix a-SiO_x:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH₄–Ar–O₂) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %)

    • Yu. K. Undalov
    • E. I. Terukov
    • I. N. Trapeznikova

    AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 06 November 2019 Pages: 1514 - 1523

    

17. Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy

    • E. A. Lipkova
    • A. I. Efimova
    • V. Yu. Timoshenko

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 06 November 2019 Pages: 1524 - 1528

    

18. High-Voltage AlInGaN LED Chips

    • L. K. Markov
    • M. V. Kukushkin
    • O. V. Osipov

    PHYSICS OF SEMICONDUCTOR DEVICES 06 November 2019 Pages: 1529 - 1534

    

19. Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells

    • M. A. Mintairov
    • V. V. Evstropov
    • N. A. Kalyuzhnyy

    PHYSICS OF SEMICONDUCTOR DEVICES 06 November 2019 Pages: 1535 - 1539

    

20. On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

    • K. A. Svit
    • K. S. Zhuravlev

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 November 2019 Pages: 1540 - 1544

    

21. Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching

    • Ya. V. Levitskii
    • M. I. Mitrofanov
    • V. P. Evtikhiev

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 November 2019 Pages: 1545 - 1549

    

22. On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates

    • P. V. Seredin
    • A. V. Fedyukin
    • N. A. Pikhtin

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 November 2019 Pages: 1550 - 1557

    

23. Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

    • I. D. Breev
    • A. N. Anisimov
    • E. N. Mokhov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 November 2019 Pages: 1558 - 1561