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Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

  • NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION)
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Abstract

The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.

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REFERENCES

  1. M. Nastasi and J. W. Mayer, Ion Implantation and Synthesis of Materials (Springer, Berlin, 2006).

    Book  Google Scholar 

  2. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000).

    Article  ADS  Google Scholar 

  3. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, G. Li, and A. I. Titov, Phys. Rev. B 64, 035202 (2001).

    Article  ADS  Google Scholar 

  4. A. I. Titov, P. A. Karaseov, K. V. Karabeshkin, V. S. Belyakov, A. V. Arkhipov, and S. O. Kucheyev, Nucl. Instrum. Methods Phys. Res., Sect. B 315, 257 (2013).

    Google Scholar 

  5. N. N. Gerasimenko, A. A. Zhukov, N. N. Gerasimenko, Jr., A. N. Tarasenkov, and I. V. Lovyagin, Izv. Vyssh. Uchebn. Zaved., Elektron., Nos. 4–5, 185 (2005).

    Google Scholar 

  6. S. O. Kucheyev, PhD Thesis (Austral. Natl. Univ., 2002), p. 72.

  7. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985); J. F. Ziegler, SRIM-2013 Software Package. http://www.srim.org.

  8. K. Schmid, Rad. Effects 17, 201 (1973).

    Article  Google Scholar 

  9. S. O. Kucheyev, J. S. Williams, and S. J. Pearton, Mater. Sci. Eng. R 33, 51 (2001).

    Article  Google Scholar 

  10. K. Lorenz, U. Wahl, E. Alves, E. Nogales, S. Dalmasso, R. W. Martin, K. P. O’Donnell, M. Wojdak, A. Braud, T. Monteiro, T. Wojtowicz, P. Ruterana, S. Ruffenach, and O. Briot, Opt. Mater. 28, 750 (2006).

    Article  ADS  Google Scholar 

  11. S. O. Kucheyev, A. Yu. Azarov, A. I. Titov, P. A. Karaseov, and T. M. Kuchumova, J. Phys. D: Appl. Phys. 42, 085309 (2009).

    Article  ADS  Google Scholar 

  12. F. Gloux, T. Wojtowicz, P. Ruterana, K. Lorenz, and E. Alves, J. Appl. Phys. 100, 073520 (2006).

    Article  ADS  Google Scholar 

  13. A. Yu. Azarov, Semiconductors 38, 1400 (2004).

    Article  ADS  Google Scholar 

  14. K. V. Karabeshkin, P. A. Karasev, and A. I. Titov, Semiconductors 50, 989 (2016).

    Article  ADS  Google Scholar 

  15. A. I. Titov, P. A. Karaseov, A. Yu. Kataev, A. Yu. Azarov, and S. O. Kucheyev, Nucl. Instrum. Methods Phys. Res., Sect. B 277, 80 (2012).

    Google Scholar 

  16. S. O. Kucheyev, J. Zou, J. S. Williams, C. Jagadish, and G. Li, Nucl. Instrum. Methods Phys. Res., Sect. B 178, 209 (2001).

    Google Scholar 

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Funding

This study was supported by the Russian Foundation for Basic Research, project no. 18-08-01213.

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Authors and Affiliations

  1. Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia

    A. I. Titov, K. V. Karabeshkin, P. A. Karaseov & A. I. Struchkov

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  1. A. I. Titov
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  2. K. V. Karabeshkin
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  3. P. A. Karaseov
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  4. A. I. Struchkov
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Correspondence to A. I. Titov.

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Translated by N. Korovin

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Titov, A.I., Karabeshkin, K.V., Karaseov, P.A. et al. Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?. Semiconductors 53, 1415–1418 (2019). https://doi.org/10.1134/S1063782619110204

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  • DOI: https://doi.org/10.1134/S1063782619110204

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