1. Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

   • N. V. Vostokov
   • V. M. Daniltsev
   • V. I. Shashkin

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1279 - 1281

   

2. 2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing)

   • N. S. Ginzburg
   • N. Yu. Peskov
   • D. I. Sobolev

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1282 - 1286

   

3. On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity

   • Vl. V. Kocharovsky
   • V. A. Kukushkin
   • V. V. Kocharovsky

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1287 - 1294

   

4. Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations

   • E. R. Kocharovskaya
   • A. V. Mishin
   • V. V. Kocharovsky

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1295 - 1303

   

5. Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots

   • I. A. Derebezov
   • V. A. Gaisler
   • S. Reitzenstein

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1304 - 1307

   

6. Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation

   • V. D. Kulakovskii
   • A. A. Demenev

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1308 - 1313

   

7. Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode

   • K. M. Morozov
   • A. V. Belonovskii
   • M. A. Kaliteevski

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1314 - 1317

   

8. Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

   • A. V. Novikov
   • D. V. Yurasov
   • Z. F. Krasilnik

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1318 - 1323

   

9. Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics

   • D. V. Yurasov
   • N. A. Baidakova
   • A. N. Yablonskiy

   XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1324 - 1328

   

10. Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

    • Zn. V. Smagina
    • V. A. Zinovyev
    • A. V. Dvurechenskii

    XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1329 - 1333

    

11. On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium

    • V. V. Tsyplenkov
    • V. N. Shastin

    XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1334 - 1339

    

12. On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond

    • N. A. Bekin

    XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1340 - 1347

    

13. Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

    • E. A. Arkhipova
    • E. V. Demidov
    • S. A. Bogdanov

    XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1348 - 1352

    

14. Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors

    • T. A. Shobolova
    • A. V. Korotkov
    • V. A. Kozlov

    XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1353 - 1356

    

15. Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

    • B. A. Andreev
    • D. N. Lobanov
    • Z. F. Krasil’nik

    XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1357 - 1362

    

16. Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures

    • K. E. Spirin
    • D. M. Gaponova
    • S. A. Dvoretsky

    XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1363 - 1366

    

17. Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid

    • P. S. Alekseev

    ELECTRONIC PROPERTIES OF SEMICONDUCTORS 01 October 2019 Pages: 1367 - 1374

18. Microwave Magnetic Absorption in HgSe with Co and Ni Impurities

    • A. I. Veinger
    • I. V. Kochman
    • L. D. Paranchich

    ELECTRONIC PROPERTIES OF SEMICONDUCTORS 01 October 2019 Pages: 1375 - 1380

    

19. Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form

    • V. G. Zavodinsky
    • A. P. Kuz’menko

    SURFACES, INTERFACES, AND THIN FILMS 01 October 2019 Pages: 1381 - 1385

    

20. Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process

    • N. D. Prasolov
    • A. A. Gutkin
    • P. N. Brunkov

    SURFACES, INTERFACES, AND THIN FILMS 01 October 2019 Pages: 1386 - 1388

    

21. Influence of Hydrogen on the Electrical Properties of Pd/InP Structures

    • V. A. Shutaev
    • V. G. Sidorov
    • Yu. P. Yakovlev

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 01 October 2019 Pages: 1389 - 1392

    

22. Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles

    • M. M. Sobolev
    • D. A. Yavsin
    • S. A. Gurevich

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 01 October 2019 Pages: 1393 - 1397

    

23. Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers

    • V. A. Kukushkin

    CARBON SYSTEMS 01 October 2019 Pages: 1398 - 1404

    

24. Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels

    • N. Yu. Gordeev
    • A. S. Payusov
    • M. V. Maximov

    PHYSICS OF SEMICONDUCTOR DEVICES 01 October 2019 Pages: 1405 - 1408

    

25. Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

    • A. A. Lebedev
    • V. V. Kozlovski
    • A. V. Zubov

    PHYSICS OF SEMICONDUCTOR DEVICES 01 October 2019 Pages: 1409 - 1413

    

26. Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas

    • H. Khmissi
    • A. M. El Sayed

    Erratum 01 October 2019 Pages: 1414 - 1414