1. On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation

   • A. V. Ikonnikov
   • L. S. Bovkun
   • N. N. Mikhailov

   XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 08 December 2017 Pages: 1531 - 1536

2. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

   • P. A. Bushuykin
   • A. V. Novikov
   • V. Yu. Davydov

   XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 08 December 2017 Pages: 1537 - 1541

3. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

   • N. A. Baidakova
   • V. A. Verbus
   • N. Usami

   XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 08 December 2017 Pages: 1542 - 1546

4. Manifestation of PT symmetry in the exciton spectra of quantum wells

   • V. P. Kochereshko
   • L. V. Kotova
   • S. V. Ivanov

   XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 08 December 2017 Pages: 1547 - 1551

5. Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

   • D. V. Yurasov
   • M. N. Drozdov
   • A. V. Novikov

   XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 08 December 2017 Pages: 1552 - 1556

6. Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

   • V. V. Rumyantsev
   • A. M. Kadykov
   • V. I. Gavrilenko

   XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 08 December 2017 Pages: 1557 - 1561

7. Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential

   • L. S. Bovkun
   • A. V. Ikonnikov
   • V. I. Gavrilenko

   XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 08 December 2017 Pages: 1562 - 1570

8. Radiation-produced defects in germanium: Experimental data and models of defects

   • V. V. Emtsev
   • V. V. Kozlovski
   • G. A. Oganesyan

   Electronic Properties of Semiconductors 08 December 2017 Pages: 1571 - 1587

9. Study and simulation of electron transport in Ga_0.5ln_0.5Sb based on Monte Carlo method

   • A. A. El Ouchdi
   • B. Bouazza
   • N. Massoum

   Electronic Properties of Semiconductors 08 December 2017 Pages: 1588 - 1591

10. Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials

    • M. Yfanti-Katti
    • F. Prokopos-Chouliaras
    • Z. Loizos

    Surfaces, Interfaces, and Thin Films 08 December 2017 Pages: 1592 - 1596

11. Effect of Ag in CdSe thin films prepared using thermal evaporation

    • T. C. M. Santhosh
    • K. V. Bangera
    • G. K. Shivakumar

    Surfaces, Interfaces, and Thin Films 08 December 2017 Pages: 1597 - 1603

12. Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications

    • M. Maache
    • T. Devers
    • A. Chala

    Surfaces, Interfaces, and Thin Films 08 December 2017 Pages: 1604 - 1610

13. Effect of high voltage electric field on structure and property of PEDOT:PSS film

    • Jinling Zhang
    • Juncheng Liu

    Surfaces, Interfaces, and Thin Films 08 December 2017 Pages: 1611 - 1614

14. A comparative study on the electronic and optical properties of Sb₂Se₃ thin film

    • M. Kamruzzaman
    • Chaoping Liu
    • J. A. Zapien

    Surfaces, Interfaces, and Thin Films 08 December 2017 Pages: 1615 - 1624

15. Charge density at the Al₂O₃/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions

    • Slah Hlali
    • Neila Hizem
    • Adel Kalboussi

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 December 2017 Pages: 1625 - 1633

16. Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer

    • A. Rayerfrancis
    • Bhargav P. Balaji
    • C. Balaji

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 December 2017 Pages: 1634 - 1640

17. Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode

    • R. Padma
    • V. Rajagopal Reddy

    Physics of Semiconductor Devices 08 December 2017 Pages: 1641 - 1649

18. Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

    • Yue-Gie Liaw
    • Wen-Shiang Liao
    • Xuecheng Zou

    Physics of Semiconductor Devices 08 December 2017 Pages: 1650 - 1655

19. Single electron transistor: Energy-level broadening effect and thermionic contribution

    • A. Nasri
    • A. Boubaker
    • A. Kalboussi

    Physics of Semiconductor Devices 08 December 2017 Pages: 1656 - 1660

20. Patterning approach for detecting defect in device manufacturing

    • Abhishek Vikram
    • Vineeta Agarwal

    Fabrication, Treatment, and Testing of Materials and Structures 08 December 2017 Pages: 1661 - 1665

21. The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

    • Sabuhi Ganiyev
    • M. Azim Khairi
    • N. F. Hasbullah

    Fabrication, Treatment, and Testing of Materials and Structures 08 December 2017 Pages: 1666 - 1670