Optical thyristor based on GaAs/InGaP materials B. N. ZvonkovN. V. BaidusV. E. Kotomina XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1391 - 1394
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots A. P. GorshkovN. S. VolkovaS. B. Levichev XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1395 - 1398
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity I. A. DerebezovV. A. GaislerS. Reitzenstein XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1399 - 1402
Thermoelectric effects in nanoscale layers of manganese silicide I. V. ErofeevaM. V. DorokhinE. A. Pitirimova XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1403 - 1408
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures V. E. DegtyarevS. V. KhazanovaA. A. Konakov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1409 - 1414
Features of the selective manganese doping of GaAs structures I. L. KalentyevaO. V. VikhrovaYu. V. Usov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1415 - 1419
Contactless characterization of manganese and carbon delta-layers in gallium arsenide O. S. KomkovA. V. Kudrin XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1420 - 1426
Inhomogeneous dopant distribution in III–V nanowires E. D. LeshchenkoV. G. Dubrovskii XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1427 - 1430
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors N. A. MaleevV. A. BelyakovV. M. Ustinov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1431 - 1434
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects I. Yu. ZabavichevE. S. ObolenskayaV. A. Kozlov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1435 - 1438
Optimization of the superlattice parameters for THz diodes D. G. PavelyevA. P. VasilevV. M. Ustinov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1439 - 1443
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors V. Ya. AleshkinL. V. Gavrilenko XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1444 - 1448
Low-temperature deposition of SiN x Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon A. I. OkhapkinS. A. KorolyovV. I. Shashkin XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1449 - 1452
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures A. N. AlexeevV. V. MamaevS. I. Petrov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1453 - 1455
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures S. M. PlankinaO. V. VikhrovaI. Yu. Pashen’kin XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1456 - 1459
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection O. V. PolischukD. V. FateevV. V. Popov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1460 - 1465
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons I. Yu. ZabavichevA. A. PotekhinV. A. Kozlov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1466 - 1471
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate R. R. ReznikK. P. KotlyarG. E. Cirlin XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1472 - 1476
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate V. Ya. AleshkinN. V. BaidusZ. F. Krasilnik XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1477 - 1480
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography V. I. BorisovN. A. KuvshinovaA. G. Temiryazev XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1481 - 1484
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy A. V. MurelV. B. ShmaginV. I. Shashkin XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1485 - 1489
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation E. A. TarasovaS. V. ObolenskyA. B. Makarov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1490 - 1494
Cyclotron resonance features in a three-dimensional topological insulators R. V. TurkevichV. Ya. DemikhovskiiA. P. Protogenov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1495 - 1499
Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures D. V. FateevK. V. MashinskyV. V. Popov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1500 - 1504
Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator D. V. KhomitskyE. A. LavrukhinaN. Njiya XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1505 - 1512
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures V. E. NikiforovD. S. AbramkinT. S. Shamirzaev XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1513 - 1516
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films A. N. AkimovA. E. KlimovV. S. Epov XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1517 - 1521
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition A. N. AkimovA. E. KlimovE. V. Fedosenko XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1522 - 1526
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates N. V. BaidusV. Ya. AleshkinZ. F. Krasilnik XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 03 November 2017 Pages: 1527 - 1530
