1. Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015)

   • D. R. Khokhlov

   Electronic Properties of Semiconductors 17 June 2016 Pages: 705 - 708

2. Matrix-type effect on the magnetotransport properties of Ni–AlO and Ni–NbO composite systems

   • O. V. Stognei
   • A. J. Maliki
   • A. V. Sitnikov

   Electronic Properties of Semiconductors 17 June 2016 Pages: 709 - 714

3. Optical properties of In₂Se₃ thin films

   • I. V. Bodnar

   Electronic Properties of Semiconductors 17 June 2016 Pages: 715 - 718

4. Anomalous thermoelectric power in Hg₃In₂Te₆ crystals

   • O. G. Grushka

   Electronic Properties of Semiconductors 17 June 2016 Pages: 719 - 721

5. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

   • N. A. Poklonski
   • S. A. Vyrko
   • A. G. Zabrodskii

   Electronic Properties of Semiconductors 17 June 2016 Pages: 722 - 734

6. Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment

   • G. P. Gaidar
   • P. I. Baranskii

   Electronic Properties of Semiconductors 17 June 2016 Pages: 735 - 740

7. On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

   • L. V. Prokofieva
   • P. P. Konstantinov
   • A. A. Shabaldin

   Electronic Properties of Semiconductors 17 June 2016 Pages: 741 - 750

8. Radiation-induced bistable centers with deep levels in silicon n ⁺–p structures

   • S. B. Lastovskii
   • V. P. Markevich
   • V. P. Krylov

   Electronic Properties of Semiconductors 17 June 2016 Pages: 751 - 755

9. On the local injection of emitted electrons into micrograins on the surface of A^III–B^V semiconductors

   • N. D. Zhukov
   • E. G. Glukhovskoi
   • A. A. Khazanov

   Surfaces, Interfaces, and Thin Films 17 June 2016 Pages: 756 - 760

10. On the ohmicity of Schottky contacts

    • A. V. Sachenko
    • A. E. Belyaev
    • R. V. Konakova

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 761 - 768

11. Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field

    • V. V. Karpunin
    • V. A. Margulis

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 769 - 774

12. Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium

    • E. V. Maraeva
    • V. A. Moshnikov
    • Yu. M. Tairov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 775 - 777

13. Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers

    • L. V. Danilov
    • A. A. Petukhov
    • Yu. P. Yakovlev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 778 - 784

14. Generation of transverse direct current in a superlattice under a bichromatic high-frequency electric and constant magnetic fields

    • D. V. Zav’yalov
    • V. I. Konchenkov
    • S. V. Kryuchkov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 785 - 790

15. Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

    • E. V. Ivanova
    • A. A. Sitnikova
    • M. V. Zamoryanskaya

    Amorphous, Vitreous, and Organic Semiconductors 17 June 2016 Pages: 791 - 794

16. Inter atomic force constants of binary and ternary tetrahedral semiconductors

    • Suresh Pal
    • R. K. Tiwari
    • A. S. Verma

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 17 June 2016 Pages: 795 - 800

17. Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models

    • S. Yu. Davydov

    Carbon Systems 17 June 2016 Pages: 801 - 809

18. Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes

    • S. A. Zuev
    • G. V. Kilessa
    • S. V. Pokrova

    Physics of Semiconductor Devices 17 June 2016 Pages: 810 - 814

19. Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis

    • N. D. Kuzmichev
    • M. A. Vasyutin
    • D. A. Shilkin

    Physics of Semiconductor Devices 17 June 2016 Pages: 815 - 818

20. Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass

    • S. A. Ivanov
    • N. V. Nikonorov
    • I. S. Tarasov

    Physics of Semiconductor Devices 17 June 2016 Pages: 819 - 823

21. Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET

    • A. I. Mikhaylov
    • A. V. Afanasyev
    • A. Schöner

    Physics of Semiconductor Devices 17 June 2016 Pages: 824 - 827

22. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    • I. M. Gadzhiyev
    • M. S. Buyalo
    • E. L. Portnoi

    Physics of Semiconductor Devices 17 June 2016 Pages: 828 - 831

23. On the photon annealing of silicon-implanted gallium-nitride layers

    • B. I. Seleznev
    • G. Ya. Moskalev
    • D. G. Fedorov

    Fabrication, Treatment, and Testing of Materials and Structures 17 June 2016 Pages: 832 - 838

24. The modification of BaCe_0.5Zr_0.3Y_0.2O_3–δ with copper oxide: Effect on the structural and transport properties

    • Yu. G. Lyagaeva
    • G. K. Vdovin
    • A. K. Demin

    Fabrication, Treatment, and Testing of Materials and Structures 17 June 2016 Pages: 839 - 843

25. Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids

    • L. B. Matyushkin
    • O. A. Ryzhov
    • V. A. Moshnikov

    Fabrication, Treatment, and Testing of Materials and Structures 17 June 2016 Pages: 844 - 847