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Radiation-induced bistable centers with deep levels in silicon n +–p structures

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Abstract

The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E V + 0.45 and E V + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 1015 s–1. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

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Authors and Affiliations

  1. Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk, 220072, Belarus

    S. B. Lastovskii, H. S. Yakushevich & L. I. Murin

  2. Photon Science Institute, Manchester University, Manchester, M13 9PL, UK

    V. P. Markevich

  3. Vladimir State University, Vladimir, 600000, Russia

    V. P. Krylov

Authors
  1. S. B. Lastovskii
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  2. V. P. Markevich
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  3. H. S. Yakushevich
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  4. L. I. Murin
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  5. V. P. Krylov
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Correspondence to S. B. Lastovskii.

Additional information

Original Russian Text © S.B. Lastovskii, V.P. Markevich, H.S. Yakushevich, L.I. Murin, V.P. Krylov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 6, pp. 767–771.

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Lastovskii, S.B., Markevich, V.P., Yakushevich, H.S. et al. Radiation-induced bistable centers with deep levels in silicon n +–p structures. Semiconductors 50, 751–755 (2016). https://doi.org/10.1134/S1063782616060130

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  • DOI: https://doi.org/10.1134/S1063782616060130

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