Ab Initio Calculations of Phonon Dispersion in ZnGa2Se4 Z. A. DzhakhangirliT. G. KerimovaN. A. Abdullaev Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 31 March 2016 Pages: 285 - 288
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC A. S. Kyuregyan Electronic Properties of Semiconductors 31 March 2016 Pages: 289 - 294
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well Kh. A. HasanovJ. I. HuseynovF. F. Aliyev Electronic Properties of Semiconductors 31 March 2016 Pages: 295 - 298
A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors N. A. PoklonskiS. A. VyrkoA. G. Zabrodskii Electronic Properties of Semiconductors 31 March 2016 Pages: 299 - 308
Deep Centers at the Interface in In2x Ga2(1–x)Te3/InAs and In2Te3/InAs Heterostructures E. P. DomashevskayaE. A. MikhailyukN. N. Bezryadin Surfaces, Interfaces, and Thin Films 31 March 2016 Pages: 309 - 313
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms R. M. PeleshchakI. I. LazurchakG. G. Zegrya Surfaces, Interfaces, and Thin Films 31 March 2016 Pages: 314 - 319
Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling G. E. YakovlevD. S. FrolovS. A. Sorokin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 March 2016 Pages: 320 - 325
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation E. A. TarasovaA. V. KhananovaD. S. Smotrin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 March 2016 Pages: 326 - 333
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction I. G. OrletskyM. I. IlashchukZ. D. Kovalyuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 March 2016 Pages: 334 - 338
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy A. S. ParshinS. A. KushchenkovYu. L. Mikhlin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 March 2016 Pages: 339 - 344
Epitaxially Grown Monoisotopic Si, Ge, and Si1–x Ge x Alloy Layers: Production and Some Properties A. P. DetochenkoS. A. DenisovH. Riemann Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 March 2016 Pages: 345 - 348
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation V. D. Popov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 March 2016 Pages: 349 - 351
On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition N. P. KlochkoK. S. KlepikovaA. V. Kopach Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 March 2016 Pages: 352 - 363
Photoluminescence and Confinement of Excitons in Disordered Porous Films N. V. BondarM. S. BrodinN. A. Matveevskaya Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 March 2016 Pages: 364 - 371
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon E. B. ChubenkoS. V. RedkoV. P. Bondarenko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 March 2016 Pages: 372 - 376
Model of Adsorption on Amorphous Graphene S. Yu. Davydov Carbon Systems 31 March 2016 Pages: 377 - 383
Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT R. SwainK. JenaT. R. Lenka Physics of Semiconductor Devices 31 March 2016 Pages: 384 - 389
Microdisk Injection Lasers for the 1.27-μm Spectral Range N. V. KryzhanovskayaM. V. MaximovA. E. Zhukov Physics of Semiconductor Devices 31 March 2016 Pages: 390 - 393
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time A. I. GusevS. K. LyubutinS. N. Tsyranov Physics of Semiconductor Devices 31 March 2016 Pages: 394 - 403
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base M. E. LevinshteinT. T. MnatsakanovJ. W. Palmour Physics of Semiconductor Devices 31 March 2016 Pages: 404 - 410
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers A. A. YugovS. S. MalahovI. A. Belogorokhov Fabrication, Treatment, and Testing of Materials and Structures 31 March 2016 Pages: 411 - 414
Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume A. P. BelyaevV. V. AntipovV. P. Rubets Fabrication, Treatment, and Testing of Materials and Structures 31 March 2016 Pages: 415 - 417
Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion O. S. KenV. S. LevitskiiO. M. Sreseli Fabrication, Treatment, and Testing of Materials and Structures 31 March 2016 Pages: 418 - 425