Formation of structures with noncatalytic CdTe nanowires I. P. SoshnikovV. A. PetrovK. Durose Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 July 2013 Pages: 875 - 878
Theory of transport phenomena in polycrystalline lead chalcogenide films. Mobility. Nondegenerate statistics Sh. B. AtakulovS. M. ZaynolobidinovaA. A. Yuldashev Electronic Properties of Semiconductors 06 July 2013 Pages: 879 - 883
Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field V. V. FilippovE. N. Bormontov Electronic Properties of Semiconductors 06 July 2013 Pages: 884 - 891
Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn V. A. RomakaP. RoglA. M. Horyn Electronic Properties of Semiconductors 06 July 2013 Pages: 892 - 898
New acceptor centers of the background impurities in p-CdZnTe S. V. PlyatskoL. V. Rashkovetskyi Electronic Properties of Semiconductors 06 July 2013 Pages: 899 - 907
Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems A. A. BabaevV. Kh. Kudoyarova Spectroscopy, Interaction with Radiation 06 July 2013 Pages: 908 - 910
Absorption and photoionization of the donor level in CdF2 semiconductor crystals S. A. KazanskiiA. S. ShcheulinA. I. Ryskin Spectroscopy, Interaction with Radiation 06 July 2013 Pages: 911 - 915
Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn L. A. KosyachenkoN. S. YurtsenyukE. V. Grushko Surfaces, Interfaces, and Thin Films 06 July 2013 Pages: 916 - 924
Topological size effect in tin-dioxide cluster films produced by reactive sputtering L. S. MaksimenkoI. E. MatyashB. K. Serdega Surfaces, Interfaces, and Thin Films 06 July 2013 Pages: 925 - 929
Statistical analysis of AFM topographic images of self-assembled quantum dots V. A. SevriukP. N. BrunkovS. G. Konnikov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2013 Pages: 930 - 934
Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures V. A. KulbachinskiiR. A. LuninE. A. Klimov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2013 Pages: 935 - 942
Electrical and photoelectric properties of n-CdO-p-InSe anisotype heterojunctions V. N. KaterynchukZ. R. KudrynskyiV. V. Netyaga Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2013 Pages: 943 - 946
Terahertz electroluminescence of fibonacci superlattices K. V. Malyshev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2013 Pages: 947 - 951
Ultralow-frequency photoelectric response of amorphous As2Se3 layers N. I. AnisimovaV. A. BordovskyR. A. Castro Amorphous, Vitreous, and Organic Semiconductors 06 July 2013 Pages: 952 - 955
Electronic properties of the interface between hexadecafluoro copper phthalocyanine and unsubstituted copper phthalocyanine films A. S. KomolovE. F. LaznevaP. S. Repin Amorphous, Vitreous, and Organic Semiconductors 06 July 2013 Pages: 956 - 961
Adsorption on tunable bilayer graphene: A model approach Z. Z. Alisultanov Carbon Systems 06 July 2013 Pages: 962 - 970
Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots A. G. VitukhnovskiiA. A. VashchenkoD. N. Bychkovskii Physics of Semiconductor Devices 06 July 2013 Pages: 971 - 977
Theory of steady-state plane tunneling-assisted impact ionization waves A. S. Kyuregyan Physics of Semiconductor Devices 06 July 2013 Pages: 978 - 986
Effect of ultrasonic loading on current in Mo/n-n +-Si with Schottky barriers O. Ya. Olikh Physics of Semiconductor Devices 06 July 2013 Pages: 987 - 992
Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR N. A. MaleevA. G. Kuz’menkovV. M. Ustinov Physics of Semiconductor Devices 06 July 2013 Pages: 993 - 996
Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations G. B. GalievS. S. PushkarevR. M. Imamov Fabrication, Treatment, and Testing of Materials and Structures 06 July 2013 Pages: 997 - 1002
Properties of Sb2S3 and Sb2Se3 thin films obtained by pulsed laser ablation I. S. VirtI. O. RudyjG. Luka Fabrication, Treatment, and Testing of Materials and Structures 06 July 2013 Pages: 1003 - 1007
Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method Malek GassoumiHana MosbahiHassen Maaref Fabrication, Treatment, and Testing of Materials and Structures 06 July 2013 Pages: 1008 - 1012