1. On the resonant level of chromium in the rhombohedral and cubic phases of Pb_{1 − x − y} Ge _x Cr _y Te alloys

   • E. P. Skipetrov
   • N. A. Pichugin
   • V. E. Slyn’ko

   Electronic Properties of Semiconductors 10 June 2013 Pages: 729 - 735

2. Energy states of a Cr²⁺ ion in ZnSe crystals

   • Yu. A. Nitsuk

   Electronic Properties of Semiconductors 10 June 2013 Pages: 736 - 739

3. Effect of fluorine, nitrogen, and carbon impurities on the electronic and magnetic properties of WO₃

   • I. R. Shein
   • A. L. Ivanovskii

   Electronic Properties of Semiconductors 10 June 2013 Pages: 740 - 744

4. Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors

   • P. I. Baranskii
   • G. P. Gaidar

   Electronic Properties of Semiconductors 10 June 2013 Pages: 745 - 748

5. Fundamental spectra of optical functions for indium bromide in the energy range of 2–30 eV at 4.2 K

   • V. V. Sobolev
   • V. Val. Sobolev
   • D. V. Anisimov

   Spectroscopy, Interaction with Radiation 10 June 2013 Pages: 749 - 754

6. Role of intervalley scattering in the radiative recombination in Pb_{1 − x} Eu _x Te alloys (0 ≤ x ≤ 1)

   • D. A. Pashkeev
   • I. I. Zasavitskiy

   Spectroscopy, Interaction with Radiation 10 June 2013 Pages: 755 - 760

7. Optical phonons in CdGa₂S_4x Se_{4(1 − x)} alloys

   • T. G. Kerimova
   • N. A. Abdullaev
   • N. T. Mamedov

   Spectroscopy, Interaction with Radiation 10 June 2013 Pages: 761 - 766

8. On the photoinduced effect in undoped a-Si:H films

   • I. A. Kurova
   • N. N. Ormont

   Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 767 - 770

9. Electrical properties of silicon schottky diodes containing metal films of various compositions

   • I. G. Pashaev

   Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 771 - 774

10. Effect of the stoichiometric composition of the Si(111)\(\sqrt {21} \) × \(\sqrt {21} \)-(Au, Ag) surface phase on substrate conductivity

    • D. A. Tsukanov
    • M. V. Ryzhkova
    • E. A. Borisenko

    Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 775 - 781

11. Study of the I–V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing

    • S. V. Tomilin
    • A. S. Yanovsky
    • G. R. Mikaelyan

    Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 782 - 786

12. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    • Samina Bidmeshkipour
    • Nasser Shahtahmasebi

    Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 787 - 790

13. On an exciton with a spatially separated electron and hole in quasi-zero-dimensional semiconductor nanosystems

    • S. I. Pokutnyi

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 791 - 798

14. Charge transport mechanisms in anisotype n-TiO₂/p-Si heterostructures

    • A. I. Mostovyi
    • V. V. Brus
    • P. D. Maryanchuk

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 799 - 803

15. Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well

    • S. M. Seyid-Rzayeva

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 804 - 807

16. Photovoltaic properties of GaAs:Be nanowire arrays

    • A. D. Bouravleuv
    • D. V. Beznasyuk
    • G. Cirlin

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 808 - 811

17. Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6H-SiC substrates

    • R. V. Konakova
    • O. F. Kolomys
    • O. B. Spiridonov

    Carbon Systems 10 June 2013 Pages: 812 - 814

18. Carbon Systems

    • Z. Z. Alisultanov

    OriginalPaper 10 June 2013 Pages: 815 - 819

19. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    • S. Çörekçi
    • M. K. Öztürk
    • E. Özbay

    Physics of Semiconductor Devices 10 June 2013 Pages: 820 - 824

20. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    • Sh. A. Mirsagatov
    • R. R. Kabulov
    • M. A. Makhmudov

    Physics of Semiconductor Devices 10 June 2013 Pages: 825 - 830

21. Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm)

    • A. N. Imenkov
    • V. V. Sherstnev
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 10 June 2013 Pages: 831 - 834

22. MOS solar cells with oxides deposited by sol-gel spin-coating techniques

    • Chia-Hong Huang
    • Chung-Cheng Chang
    • Jung-Hui Tsai

    Physics of Semiconductor Devices 10 June 2013 Pages: 835 - 837

23. Open-circuit voltage of an illuminated nonideal heterojunction

    • V. A. Borschak
    • V. A. Smyntyna
    • N. P. Zatovskaya

    Physics of Semiconductor Devices 10 June 2013 Pages: 838 - 843

24. Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

    • S. A. Blokhin
    • M. A. Bobrov
    • V. M. Ustinov

    Physics of Semiconductor Devices 10 June 2013 Pages: 844 - 848

25. DLTS Study of plastically deformed copper-doped n-type germanium

    • S. A. Shevchenko
    • A. I. Kolyubakin

    Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 849 - 855

26. Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells

    • N. P. Klochko
    • G. S. Khrypunov
    • V. A. Nikitin

    Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 856 - 864

27. Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy

    • D. A. Pavlov
    • P. A. Shilyaev
    • M. D. Pegasina

    Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 865 - 869

28. Effect of ion treatment on the properties of In₂O₃:Sn films

    • P. N. Krylov
    • R. M. Zakirova
    • F. Z. Gilmutdinov

    Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 870 - 874