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Study of the I–V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing

  • Surfaces, Interfaces, and Thin Films
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Abstract

The I–V characteristics of nanostructured Pd films on a Si substrate are investigated. The nanostructures (nanoislands) are formed by the vacuum annealing of continuous ultrathin Pd films sputtered onto a substrate. The shape of the I–V characteristics of the investigated Si substrate-Pd film system is shown to be heavily dependent on the degree of film nanostructuring. The surface morphology of the films is studied using scanning electron microscopy.

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Authors and Affiliations

  1. Department of Semiconductor Physics, Zaporozhye National University, Zaporozhye, 69600, Ukraine

    S. V. Tomilin, A. S. Yanovsky, O. A. Tomilina & G. R. Mikaelyan

Authors
  1. S. V. Tomilin
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  2. A. S. Yanovsky
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  3. O. A. Tomilina
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  4. G. R. Mikaelyan
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Corresponding author

Correspondence to S. V. Tomilin.

Additional information

Original Russian Text © S.V. Tomilin, A.S. Yanovsky, O.A. Tomilina, G.R. Mikaelyan, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 6, pp. 772–776.

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Tomilin, S.V., Yanovsky, A.S., Tomilina, O.A. et al. Study of the I–V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing. Semiconductors 47, 782–786 (2013). https://doi.org/10.1134/S1063782613060286

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  • DOI: https://doi.org/10.1134/S1063782613060286

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