1. Light emission from silicon nanocrystals

   • O. B. Gusev
   • A. N. Poddubny
   • I. N. Yassievich

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 183 - 202

2. Monoisotopic silicon ²⁸Si in spin resonance spectroscopy of electrons localized at donors

   • A. A. Ezhevskii
   • S. A. Popkov
   • H. Riemann

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 203 - 208

3. Utilization of silicon detectors with “ideal-diode” current-voltage characteristics

   • V. L. Sukhanov
   • P. N. Aruev
   • E. V. Sherstnev

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 209 - 212

4. Photoresponse recovery in silicon photodiodes upon VUV irradiation

   • V. V. Zabrodskiy
   • P. N. Aruev
   • E. V. Sherstnev

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 213 - 216

5. Radiation effects in Si-Ge quantum size structure (Review)

   • N. A. Sobolev

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 217 - 227

6. Annealing kinetics of boron-containing centers in electron-irradiated silicon

   • O. V. Feklisova
   • N. A. Yarykin
   • J. Weber

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 228 - 231

7. Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon

   • O. V. Feklisova
   • X. Yu
   • E. V. Yakimov

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 232 - 234

8. Shallow-donor lasers in uniaxially stressed silicon

   • K. A. Kovalevsky
   • R. Kh. Zhukavin
   • H. -W. Hübers

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 235 - 241

9. Damage formation in Si under irradiation with PF _n ⁺ ions of different energies

   • K. V. Karabeshkin
   • P. A. Karaseov
   • A. I. Titov

   IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 242 - 246

10. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

    • Yu. A. Astrov
    • S. A. Lynch
    • A. N. Lodygin

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 247 - 251

11. Aligned arrays of zinc oxide nanorods on silicon substrates

    • A. N. Redkin
    • M. V. Ryzhova
    • A. N. Gruzintsev

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 252 - 258

12. Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers

    • A. S. Bondarenko
    • O. F. Vyvenko
    • I. A. Isakov

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 259 - 263

13. Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers

    • V. I. Vdovin
    • E. V. Ubyivovk
    • O. F. Vyvenko

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 264 - 268

14. Optical properties of silicon with a high content of boron

    • L. I. Khirunenko
    • Yu. V. Pomozov
    • M. G. Sosnin

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 269 - 274

15. Identification of copper-copper and copper-hydrogen complexes in silicon

    • N. A. Yarykin
    • J. Weber

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 275 - 278

16. Tunnel field-effect transistors with graphene channels

    • D. A. Svintsov
    • V. V. Vyurkov
    • R. Oechsner

    IX International Conference “Silicon-2012”, St. Petersburg, July 29-13, 2012 19 February 2013 Pages: 279 - 284

17. The electrically active centers in oxygen-implanted silicon

    • A. S. Loshachenko
    • O. F. Vyvenko
    • N. A. Sobolev

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 285 - 288

18. Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum

    • N. A. Sobolev
    • A. S. Loshachenko
    • E. I. Shek

    IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012 19 February 2013 Pages: 289 - 291

19. Determination of the thickness and spectral dependence of the refractive index of Al _x In_{1 − x} Sb epitaxial layers from reflectance spectra

    • O. S. Komkov
    • D. D. Firsov
    • S. V. Ivanov

    Surfaces, Interfaces, and Thin Films 19 February 2013 Pages: 292 - 297

20. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    • P. A. Alexandrov
    • K. D. Demakov
    • Yu. Yu. Kuznetsov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 19 February 2013 Pages: 298 - 300

21. Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface

    • N. V. Agrinskaya
    • V. A. Berezovets
    • A. A. Sitnikova

    Carbon Systems 19 February 2013 Pages: 301 - 306

22. High-efficiency GaSb photocells

    • V. P. Khvostikov
    • S. V. Sorokina
    • V. M. Andreev

    Physics of Semiconductor Devices 19 February 2013 Pages: 307 - 313