, Volume 47, Issue 2, pp 279–284 | Cite as

Tunnel field-effect transistors with graphene channels

  • D. A. Svintsov
  • V. V. VyurkovEmail author
  • V. F. Lukichev
  • A. A. Orlikovsky
  • A. Burenkov
  • R. Oechsner
IX International Conference “Silicon-2012”, St. Petersburg, July 29-13, 2012


The lack of an OFF-state has been the main obstacle to the application of graphene-based transistors in digital circuits. Recently vertical graphene tunnel field-effect transistors with a low OFF-state current have been reported; however, they exhibited a relatively weak effect of gate voltage on channel conductivity. We propose a novel lateral tunnel graphene transistor with the channel conductivity effectively controlled by the gate voltage and the subthreshold slope approaching the thermionic limit. The proposed transistor has a semiconductor (dielectric) tunnel gap in the channel operated by gate and exhibits both high ON-state current inherent to graphene channels and low OFF-state current inherent to semiconductor channels.


Gate Voltage Tunnel Current Dirac Point Drain Voltage Hexagonal Boron Nitride 
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Copyright information

© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  • D. A. Svintsov
    • 1
  • V. V. Vyurkov
    • 1
    Email author
  • V. F. Lukichev
    • 1
  • A. A. Orlikovsky
    • 1
  • A. Burenkov
    • 2
  • R. Oechsner
    • 2
  1. 1.Institute of Physics and TechnologyRussian Academy of SciencesMoscowRussia
  2. 2.Fraunhofer Institute of Integrated Systems and Device TechnologyErlangenGermany

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