1. Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range

   • A. V. Ikonnikov
   • M. S. Zholudev
   • S. A. Dvoretskii

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1545 - 1550

2. Anisotropy of the solid-state epitaxy of silicon carbide in silicon

   • S. A. Kukushkin
   • A. V. Osipov

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1551 - 1555

3. Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

   • P. A. Yunin
   • Yu. N. Drozdov
   • D. N. Lobanov

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1556 - 1561

4. Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport

   • A. V. Germanenko
   • G. M. Minkov
   • N. N. Mikhailov

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1562 - 1566

5. Photo- and electroluminescence from semiconductor colloidal quantum dots in organic matrices: QD-OLED

   • A. G. Vitukhnovskii
   • A. A. Vaschenko
   • D. A. Korzhonov

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1567 - 1569

6. Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges

   • A. A. Usikova
   • N. D. Il’inskaya
   • P. S. Kop’ev

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1570 - 1573

7. Lateral photoconductivity in structures with Ge/Si quantum dots

   • V. Yu. Panevin
   • A. N. Sofronov
   • G. Schmidt

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1574 - 1577

8. Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)

   • N. V. Kurova
   • V. A. Burdov

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1578 - 1582

9. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots

   • N. S. Volkova
   • A. P. Gorshkov
   • B. N. Zvonkov

   Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1583 - 1586

10. Structural studies of a ferromagnetic GaMnSb layer

    • A. I. Bobrov
    • E. D. Pavlova
    • N. V. Malekhonova

    Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1587 - 1590

11. Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer

    • E. D. Pavlova
    • A. P. Gorshkov
    • B. N. Zvonkov

    Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1591 - 1594

12. Growth model of silicon nanoislands on sapphire

    • N. O. Krivulin
    • D. A. Pavlov
    • P. A. Shilyaev

    Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1595 - 1597

13. Laterally localizing potential as a tool for controlling the electron spin relaxation time in GaAs quantum wells

    • A. V. Larionov
    • A. I. Il’in

    Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1598 - 1603

14. Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond

    • Yu. M. Belousov
    • V. R. Soloviev
    • I. V. Chernousov

    Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1604 - 1609

15. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    • Majid Khan
    • Mohammad Islam

    Spectroscopy, Interaction With Radiation 11 December 2013 Pages: 1610 - 1615

16. Simulation of the absorption of a femtosecond laser pulse in crystalline silicon

    • I. V. Guk
    • G. A. Martsinovsky
    • E. B. Yakovlev

    Spectroscopy, Interaction with Radiation 11 December 2013 Pages: 1616 - 1620

17. Study of the polarizations of (Al,Ga,AlGa)N nitride compounds and the charge density of various interfaces based on them

    • I. A. Supryadkina
    • K. K. Abgaryan
    • I. V. Mutigullin

    Surfaces, Interfaces, and Thin Films 11 December 2013 Pages: 1621 - 1625

18. Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems

    • S. I. Pokutnyi

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 December 2013 Pages: 1626 - 1635

19. Study of the photocatalytic and sensor properties of ZnO/SiO₂ nanocomposite layers

    • A. S. Bozhinova
    • N. V. Kaneva
    • E. I. Terukov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 December 2013 Pages: 1636 - 1640

20. Dynamic characteristics of double-barrier nanostructures with asymmetric barriers of finite height and widths in a strong ac electric field

    • V. A. Chuenkov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 December 2013 Pages: 1641 - 1651

21. Fabrication and study of p-n structures with crystalline inclusions in the space-charge region

    • V. S. Kalinovsky
    • R. V. Levin
    • V. M. Andreev

    Physics of Semiconductor Devices 11 December 2013 Pages: 1652 - 1655

22. Spectral dependence of the linewidth enhancement factor in quantum dot lasers

    • F. I. Zubov
    • Yu. M. Shernyakov
    • N. Yu. Gordeev

    Physics of Semiconductor Devices 11 December 2013 Pages: 1656 - 1660