On the problem of lasing in traps for the bose condensation of dipolar excitons P. A. KalininV. V. KocharovskyVl. V. Kocharovsky XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1351 - 1357
Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers A. V. MurelA. V. NovikovD. V. Yurasov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1358 - 1361
Study of lifetimes and photoconductivity relaxation in heterostructures with Hg x Cd1 − x Te/Cd y Hg1 − y Te quantum wells S. V. MorozovM. S. JoludevM. Helm XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1362 - 1366
Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers Yu. G. Sadofyev XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1367 - 1371
Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation B. A. AndreevZ. F. KrasilnikA. N. Yablonskiy XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1372 - 1375
Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods S. V. MorozovD. I. KryzhkovO. V. Vihrova XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1376 - 1380
Prototypes of photovoltaic cells based on subphthalocyanine with a lower buffer layer G. L. PakhomovV. V. TravkinYu. N. Drozdov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1381 - 1386
Features of impurity-photoconductivity relaxation in boron-doped silicon V. V. RumyantsevS. V. MorozovD. V. Kozlov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1387 - 1391
Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry Yu. N. DrozdovM. N. DrozdovP. A. Yunin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1392 - 1395
Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier K. E. SpirinK. P. KalininYu. G. Sadofyev XVI Symposium “nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1396 - 1401
Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells D. V. UshakovYu. G. SadofyevN. Samal XVI Symposium “nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1402 - 1406
Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping A. N. YablonskiyB. A. AndreevZ. F. Krasilnik XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1407 - 1410
Diagnostics of quantum cascade structures by optical methods in the near infrared region D. I. KryzhkovS. V. MorozovYu. G. Sadofyev XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1411 - 1414
Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots A. V. AntonovV. M. DaniltsevV. I. Shashkin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1415 - 1417
Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands D. N. LobanovA. V. NovikovP. Werner XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1418 - 1422
Electro-optical trap for dipolar excitons A. V. GorbunovV. B. Timofeev XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1423 - 1428
Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy A. N. AlexeevD. M. KrasovitskyV. P. Chaly XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1429 - 1431
Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals V. L. BerkovitsA. B. GordeevaV. P. Ulin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1432 - 1436
Investigation of the structure of the ground state of lithium donor centers in silicon enriched in 28Si isotope and the influence of internal strain in the crystal on this structure A. A. EzhevskiiS. A. PopkovH. Riemann XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1437 - 1442
Tunneling and current characteristics of two-miniband superlattice Yu. Yu. RomanovaM. L. OrlovYu. A. Romanov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1443 - 1450
Parametric generation of high-frequency harmonics in semiconductor superlattices Yu. Yu. Romanova XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1451 - 1459
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix V. G. TalalaevA. A. TonkikhG. E. Cirlin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 November 2012 Pages: 1460 - 1470
