Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation A. M. IvanovV. V. KozlovskiA. A. Lebedev Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 20 February 2011 Pages: 141 - 144
Effect of annealing on the electrical properties of thallium-doped PbTe single crystals G. A. AhmedovaG. J. AbdinovaJ. Sh. Abdinov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 20 February 2011 Pages: 145 - 147
Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped n-Bi0.88Sb0.12 single crystals B. A. TairovO. I. IbragimovaR. Brazis Electronic Properties of Semiconductors 20 February 2011 Pages: 148 - 152
Photoresponse asymmetry of CdZnTe crystals A. V. ButV. P. MygalA. S. Phomin Electronic Properties of Semiconductors 20 February 2011 Pages: 153 - 157
On the magnetic phase transition in strongly chained TlFeS2 and TlFeSe2 semiconductors R. G. Veliyev Electronic Properties of Semiconductors 20 February 2011 Pages: 158 - 161
Photoelectric and luminescent properties of dysprosium-doped silver chloride G. F. NovikovE. V. RabenokA. N. Latyshev Spectroscopy, Interaction with Radiation 20 February 2011 Pages: 162 - 168
Photovoltaic properties of interfaces of organic films of substituted perylene with TiO2 and SnO2 surfaces A. S. KomolovE. F. LaznevaM. V. Zimina Surfaces, Interfaces, and Thin Films 20 February 2011 Pages: 169 - 173
Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure G. GulyamovN. U. Sharibaev Surfaces, Interfaces, and Thin Films 20 February 2011 Pages: 174 - 178
Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature D. S. AbramkinK. S. ZhuravlevA. K. Kalagin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 179 - 187
Semiconductor surface potential relaxation in the MIS structure in the presence of convective currents in insulator and through its boundaries S. G. Dmitriev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 188 - 191
Modulation waves of charge carriers in n- and p-type semiconductor layers T. T. MnatsakanovM. E. LevinshteinS. N. Yurkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 192 - 197
Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers M. V. ShaleevA. V. NovikovZ. F. Krasilnik Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 198 - 202
Piecewise parabolic negative magnetoresistance of two-dimensional electron gas with triangular antidot lattice M. V. BudantsevR. A. LavrovD. A. Pokhabov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 203 - 207
Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells A. A. ToropovV. Kh. KaibyshevP. S. Kop’ev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 208 - 214
The ratio of the hole and electron exchange integrals in a CdMnSe/ZnSe diluted magnetic structure with quantum dots I. I. ReshinaS. V. Ivanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 215 - 220
Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells O. A. SoltanovichN. M. ShmidtE. B. Yakimov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 221 - 224
Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands Z. F. KrasilnikK. E. KudryavtsevD. V. Shengurov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 20 February 2011 Pages: 225 - 229
Quasi-equilibrium hopping drift and field-stimulated diffusion in ultrathin layers of organic materials N. A. KorolevV. R. NikitenkoD. V. Ivanov Amorphous, Vitreous, and Organic Semiconductors 20 February 2011 Pages: 230 - 235
Optical generation of free charge carriers in thin films of tin oxide I. A. ZhurbinaO. I. TsetlinV. Yu. Timoshenko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 20 February 2011 Pages: 236 - 240
Spectral width of laser generation in quantum dot lasers: An analytical approach A. V. SavelyevM. V. MaximovA. E. Zhukov Physics of Semiconductor Devices 20 February 2011 Pages: 241 - 247
Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range M. P. MikhailovaI. A. AndreevYu. P. Yakovlev Physics of Semiconductor Devices 20 February 2011 Pages: 248 - 252
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes A. E. BelyaevV. V. BasanetsA. B. Ataubaeva Physics of Semiconductor Devices 20 February 2011 Pages: 253 - 259
Electron probe microanalysis of heterostructures with nanolayers T. B. PopovaL. A. BakaleinikovM. V. Zamoryanskaya Fabrication, Treatment, and Testing of Materials and Structures 20 February 2011 Pages: 260 - 264
Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation V. A. VolodinA. S. Kachko Fabrication, Treatment, and Testing of Materials and Structures 20 February 2011 Pages: 265 - 270
Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them A. F. TsatsulnikovW. V. LundinD. Gerthsen Fabrication, Treatment, and Testing of Materials and Structures 20 February 2011 Pages: 271 - 276
