Skip to main content
SpringerLink
Log in

Modulation waves of charge carriers in n- and p-type semiconductor layers

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The effect of the carrier mobility dependence on the electric field strength, μ(F), on the propagation of waves of injected carriers in n- and p-type layers in the quasi-neutral drift mode has been studied. It is shown that consideration of the dependence μ(F) differently affects the motion of minority carriers in n- and p-type layers. The motion of an electron wave in the p-type base of a p +-p-n + structure is slowed down, and that of a hole wave in the n-base of a p +-n-n + structure is speeded up. The results obtained supplement the previously suggested classical description of the propagation of a wave of minority carriers, which disregarded the effect of μ(F) dependences. The results of an analytical calculation are confirmed using a numerical experiment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. F. Kardo-Sysoev, in Ultrawideband Radar Technology, Ed. by J. D. Taylor (CRC Press, 2000), p. 205.

  2. P. Rodin, U. Ebert, W. Hundsdorfer, and I. V. Grekhov, J. Appl. Phys. 92, 1971 (2002).

    Article  ADS  Google Scholar 

  3. A. V. Gorbatyuk, I. V. Grekhov, S. V. Korotkov, L. S. Kostina, and N. S. Yakovchuk, Pis’ma Zh. Tekh. Fiz. 8, 685 (1982) [Sov. Tech. Phys. Lett. 8, 298 (1982)].

    Google Scholar 

  4. V. M. Tuchkevich and I. V. Grekhov, New Principles of High-Power Switching with Semiconductor Devices (Nauka, Leningrad, 1988) [in Russian].

    Google Scholar 

  5. S. N. Vainshtein, V. S. Yuferev, and J. T. Kostamovaara, Solid State Electon. 47, 1255 (2003).

    Article  ADS  Google Scholar 

  6. S. N. Vainshtein, J. T. Kostamovaara, Y. Sveshnikov, S. Gurevich, M. Kulagina, V. S. Yuferev, L. Shestak, and M. Sverdlov, Electron. Lett. 40, 85 (2004).

    Article  Google Scholar 

  7. I. V. Grekhov, Izv. RAN, Ser. Energetika, No. 1, 53 (2000).

  8. I. V. Grekhov and G. A. Mesyats, IEEE Trans. Plasma Sci. 28, 1540 (2000).

    Article  ADS  Google Scholar 

  9. S. A. Darznek, Yu. A. Kotov, G. A. Mesyats, and S. N. Rukin, Dokl. Akad. Nauk 334, 304 (1994) [Dokl. Phys. 39, 105 (1994)].

    Google Scholar 

  10. Yu. A. Kotov, G. A. Mesyats, S. N. Rukin, and A. L. Filatov, Dokl. Akad. Nauk 330, 515 (1993).

    Google Scholar 

  11. Yu. R. Nosov, Physical Basics of Semiconductor Diode Operation in Pulsed Mode (Nauka, Moscow, 1968) [in Russian].

    Google Scholar 

  12. R. H. Dean, J. Appl. Phys. 46, 585 (1969).

    Article  ADS  Google Scholar 

  13. S. L. Rumyantsev, Fiz. Tekh. Poluprovodn. 26, 1955 (1992) [Sov. Phys. Semicond. 26, 1097 (1992)].

    Google Scholar 

  14. T. T. Mnatsakanov, M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, M. Das, and A. K. Agarwal, Semicond. Sci. Technol. 20, 62 (2005).

    Article  ADS  Google Scholar 

  15. T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, P. A. Ivanov, S. N. Yurkov, and J. W. Palmour, J. Appl. Phys. 99, 958 (2006).

    Article  Google Scholar 

  16. M. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970; Mir, Moscow, 1973).

    Google Scholar 

  17. T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, and S. N. Yurkov, Semicond. Sci. Technol. 24(7), 62 (2009).

    Article  Google Scholar 

  18. T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, and S. N. Yurkov, Solid State Electron. 55 (2011), accepted for publication.

  19. T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, and S. N. Yurkov, Fiz. Tekh. Poluprovodn. 41, 1401 (2007) [Semiconductors 41, 1381 (2007)].

    Google Scholar 

  20. E. Kamke, Differentialgleichungen Losungsmethoden Und Losungen (Akademische Verlagsgesellschaft, Leipzig, 1957; Nauka, Moscow, 1966).

    Google Scholar 

  21. T. T. Mnatsakanov, I. L. Rostovtsev, and N. I. Philatov, Solid State Electron. 30, 579 (1987).

    Article  ADS  Google Scholar 

  22. T. T. Mnatsakanov, I. L. Rostovtsev, and N. I. Filatov, Fiz. Tekh. Poluprovodn. 18, 1293 (1984) [Sov. Phys. Semicond. 18, 807 (1984)].

    Google Scholar 

  23. T. T. Mnatsakanov, Phys. Status Solidi B 143, 225 (1987).

    Article  ADS  Google Scholar 

  24. M. E. Levinshtein and T. T. Mnatsakanov, IEEE Trans. Electron. Dev. 49, 702 (2002).

    Article  ADS  Google Scholar 

  25. P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, and A. K. Agarwal, Fiz. Tekh. Poluprovodn. 39, 897 (2005) [Semiconductors 39, 861 (2005)].

    Google Scholar 

  26. M. E. Levinshtein, S. L. Rumyantsev, T. T. Mnatsa- kanov, A. K. Agarwal, and J. W. Palmour, in SiC Materials and Devices (World Sci., Singapore, 2006), v. 1, p. 227.

    Book  Google Scholar 

  27. Handbook Series of Semiconductor Parameters: Elementary Semiconductors and AIIIBV Compounds Si, Ge, C, GaAs, GaP, GaSb, InAs, InP, InSb, Ed. by M. E. Levin- shtein, S. L. Rumyantsev, and M. S. Shur (World Sci., Singapore, 1996), v. 1.

    Google Scholar 

  28. T. T. Mnatsakanov, B. N. Gresserov, and L. I. Pomortseva, Solid State Electron. 38, 225 (1995).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. All-Russia Electrotechnical Institute, Moscow, 111250, Russia

    T. T. Mnatsakanov, A. G. Tandoev & S. N. Yurkov

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. E. Levinshtein

Authors
  1. T. T. Mnatsakanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. E. Levinshtein
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. G. Tandoev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. N. Yurkov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. E. Levinshtein.

Additional information

Original Russian Text © T.T. Mnatsakanov, M.E. Levinshtein, A.G. Tandoev, S.N. Yurkov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 2, pp. 196–201.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Mnatsakanov, T.T., Levinshtein, M.E., Tandoev, A.G. et al. Modulation waves of charge carriers in n- and p-type semiconductor layers. Semiconductors 45, 192–197 (2011). https://doi.org/10.1134/S106378261102014X

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106378261102014X

Keywords

Search

Navigation