Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO2 composites in the 1.3–1.6 μm spectral range A. B. PevtsovS. A. GrudinkinV. G. Golubev Electrical and Optical Properties of Semiconductors 30 December 2010 Pages: 1537 - 1542
Features of vanadium impurity states in lead telluride A. I. ArtamkinA. A. DobrovolskyD. R. Khokhlov Electrical and Optical Properties of Semiconductors 30 December 2010 Pages: 1543 - 1547
Galvanomagnetic and thermoelectric properties of BiTeBr and BiTeI single crystals and their electronic structure V. A. KulbachinskiiV. G. KytinA. V. Shevelkov Electrical and Optical Properties of Semiconductors 30 December 2010 Pages: 1548 - 1553
Enhancement of the output emission efficiency of thin-film photoluminescence composite structures based on PbSe N. P. AnisimovaN. E. TropinaA. N. Tropin Semiconductor Structures, Interfaces, and Surfaces 30 December 2010 Pages: 1554 - 1558
Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with γ-ray 60Co photons A. E. BelyaevN. S. BoltovetsV. N. Sheremet Semiconductor Structures, Interfaces, and Surfaces 30 December 2010 Pages: 1559 - 1566
Study of tunneling transport of carriers in structures with an InGaN/GaN active region V. S. SizovV. V. NeplohJ. L. Merz Semiconductor Structures, Interfaces, and Surfaces 30 December 2010 Pages: 1567 - 1575
Specific features of photoelectric properties of layered films of amorphous hydrogenated silicon I. A. KurovaN. N. Ormont Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 30 December 2010 Pages: 1576 - 1580
Photophysical properties of indolo[3,2-b]carbazoles as a promising class of optoelectronic materials V. M. SvetlichnyiE. L. AlexandrovaV. V. Kudryavtsev Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 30 December 2010 Pages: 1581 - 1587
Free-standing luminescent layers of porous silicon D. N. GoryachevL. V. BelyakovO. M. Sreseli Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 30 December 2010 Pages: 1588 - 1591
InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate D. A. VinokurovD. N. NikolaevI. S. Tarasov Physics of Semiconductor Devices 30 December 2010 Pages: 1592 - 1596
Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors V. P. KuznetsovV. B. ShmaginZ. F. Krasilnik Physics of Semiconductor Devices 30 December 2010 Pages: 1597 - 1599
Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors V. M. EmelyanovN. A. KalyuzhniyV. M. Lantratov Physics of Semiconductor Devices 30 December 2010 Pages: 1600 - 1605
Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties I. G. AtabaevM. U. HajievK. A. Bobojonov Fabrication, Treatment, and Testing of Materials and Structures 30 December 2010 Pages: 1606 - 1610
Formation and crystallization of silicon nanoclusters in SiN x :H films using femtosecond pulsed laser annealings T. T. KorchaginaV. A. VolodinB. N. Chichkov Fabrication, Treatment, and Testing of Materials and Structures 30 December 2010 Pages: 1611 - 1616
Formation of 2D photonic crystal bars by simultaneous photoelectrochemical etching of trenches and macropores in silicon E. V. AstrovaG. V. FedulovaE. V. Guschina Fabrication, Treatment, and Testing of Materials and Structures 30 December 2010 Pages: 1617 - 1623
Yurii Vasil’evich Shmartsev (Dedicated to his 80th birthday) Personalia 30 December 2010 Pages: 1624 - 1624