Abstract
Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 × 1015 cm−2 has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.
Similar content being viewed by others
References
M. Meusel, C. Baur, W. Guter, M. Hermle, F. Dimroth, A. W. Bett, T. Bergunde, R. Dietrich, R. Kern, W. Kos- tler, M. Nell, W. Zimmermann, G. LaRoche, G. Strobl, S. Taylor, C. Signorini, and G. Hey, in Proc. of the 20th EPSEC (Barcelona, 2005), p. 20.
T. Sumita, M. Imaizumi, S. Matsuda, T. Ohshima, A. Ohi, and T. Kamiya, in Proc. of the 3rd WCPVEC (2003), p. 689.
V. M. Lantratov, I. V. Kochnev, and M. Z. Shvarts, in Proc. of the 27th SOTAPOCS Electrochemical Society, vol. 97-21, p. 125.
M. Z. Shvarts, O. I. Chosta, I. V. Kochnev, V. M. Lantratov, and V. M. Andreev, Sol. Energy Mater. Solar Cells 68, 105 (2001).
V. Emelyanov, N. Kaluzhniy, S. Mintairov, M. Shvarts, and V. Lantratov, in Proc. of the Intern. Conf. on Micro- and Nano-Electronics 2009 (SPIE, Bellingham, WA, 2010), Proc. SPIE 7521, 75210D (2010).
V. M. Andreev, V. S. Kalinovskii, O. V. Sulima, et al., Fiz. Tekh. Poluprovodn. 22, 881 (1988) [Sov. Phys. Semicond. 22, 556 (1988)].
K. A. Bertness, M. L. Ristow, M. E. Klausmeier-Brown, M. Grounner, M. S. Kuryla, and M. S. Werthen, in Proc. of the 21st IEEE PVSC (Kissimimee, FL, 1990), p. 1231.
K. A. Bertness, B. T. Cavicchi, S. R. Kurtz, J. M. Olson, A. E. Kibbler, and C. Kramer, in Proc. of the 22nd IEEE PVSEC (Las Vegas, NV, 1991), p. 1582.
V. P. Khvostikov, V. R. Larionov, E. V. Paleeva, S. V. Sorokina, O. I. Chosta, M. Z. Shvarts, and N. S. Zimogorova, in Proc. of the 4th Eur. Space Power Conf. (Poitiers, France, 1995), v. 2, p. 359.
V. M. Andreev, V. S. Kalinovskii, and O. V. Sulima, in Proc. of the 10th EPVSEC (Lisbon, 1991), p. 52.
O. I. Chosta, V. P. Khvostikov, V. M. Lantratov, and M. Z. Shvarts, in Proc. of the 14th EPVSEC (Barcelona, 1997), p. P6 A.14
J. Loferski and P. Rappaport, J. Phys. Rev. 111, 432 (1957).
F. Junga and A. Enslow, IRE Trans. NS-6, 49 (1959).
W. Rosenzweig, H. K. Gummel, and F. M. Smits, Bell Syst. Techn. J. 42, 399 (1963).
W. Rosenzweig, F. M. Smits, and W. L. Brown, J. Appl. Phys. 35, 2707 (1964).
A. M. Vasil’ev and A. P. Landsman, Semiconductor Phototransducers (Sov. radio, Moscow, 1971) [in Russian].
V. M. Emel’yanov, S. A. Mintairov, N. A. Kaluzhniy, and V. M. Lantratov, Nauchno-Tekh. Vedom. SPbGPU: Fiz. Mat. 77, 14 (2009).
S. A. Mintairov, V. M. Andreev, V. M. Emel’yanov, N. A. Kaluzhniy, N. K. Timoshina, M. Z. Shvarts, and V. M. Lantratov, Fiz. Tekh. Poluprovodn. 44, 1118 (2010) [Semiconductors 44, 1084 (2010)].
M. Yamaguchi, T. Sasaki, H.-S. Lee, C. Morioka, N. J. Ekins-Daukes, M. Imaizumi, T. Takamoto, and T. Ohshima, in Proc. of the 33rd IEEE PVSC (San Diego, USA, 2008), PVSC.2008.4922716.
S. Sato, H. Miyamoto, M. Imaizumi, K. Shimazaki, C. Morioka, K. Kawano, and T. Ohshima, in Proc. of the 33rd IEEE PVSC (San Diego, USA, 2008), PVSC.2008.4922706.
D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, J. Appl. Phys. 60, 754 (1986).
S. S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information (Kluwer Academic, Boston, 1999).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.M. Emelyanov, N.A. Kalyuzhniy, S.A. Mintairov, M.Z. Shvarts, V.M. Lantratov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 12, pp. 1649–1654.
Rights and permissions
About this article
Cite this article
Emelyanov, V.M., Kalyuzhniy, N.A., Mintairov, S.A. et al. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors. Semiconductors 44, 1600–1605 (2010). https://doi.org/10.1134/S1063782610120122
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782610120122